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Ключевое слово introduction [307 articles]

Recent papers classified by the tag introduction.
  • Towards Principles for the Design of Ontologies Used for Knowledge Sharing
    (1993)
    by TR Gruber
    edited by N Guarino, R Poli
  • Visual attention: the where, what, how and why of saliency.
    Curr Opin Neurobiol, Vol. 13, No. 4. (August 2003), pp. 428-432.
    by S Treue
  • I'm sorry to say, but your understanding of image processing fundamentals is absolutely wrong
    (1 Aug 2008)
    by Emanuel Diamant
    posted to introduction machine_learning by zeppe on 2008-08-08 15:11:48 as read along with 1 person schumach
  • A feature-integration theory of attention
    Cognitive Psychology, Vol. 12, No. 1. (January 1980), pp. 97-136.
    by Anne M Treisman, Garry Gelade
  • Visual attention: bottom-up versus top-down.
    Curr Biol, Vol. 14, No. 19. (5 October 2004)
    by CE Connor, HE Egeth, S Yantis
  • Methods and Techniques of Complex Systems Science: An Overview
    (15 Jul 2003)
    by Cosma R Shalizi
  • An Introduction to Sequential Monte Carlo Methods
    Journal of the Royal Statistical Society: Series D (The Statistican), Vol. 52, No. 4. (December 2003), pp. 694-695.
    by F Kemp
    posted to an carlo introduction methods monte sequential to by wooden on 2006-12-09 13:45:08 as ** along with 1 person syoyo
  • An introduction to graphical models
    (2001)
    by Kevin Murphy
  • An Introduction to Variational Methods for Graphical Models
    Mach. Learn., Vol. 37, No. 2. (1999), pp. 183-233.
    by Michael I Jordan, Zoubin Ghahramani, Tommi S Jaakkola, Lawrence K Saul
  • Introductory Lectures on String Theory
    (5 Aug 2008)
    by AA Tseytlin
  • The role of shear forces in arterial branching
    J. Gen. Physiol., Vol. 67, No. 2. (1 February 1976), pp. 213-222.
    by M Zamir
    posted to arterial branching introduction murrays_law shear tree by tsjipko on 2008-05-17 23:08:42 as **
  • Einführung in das systemisches Wissensmanagement
    (31 October 2004)
    by Helmut Willke
  • Konstruktivistisches Lernen mit Moodle: Praktische Einsatzmöglichkeiten in Bildungsinstitutionen
    by Ulrike Höbarth
    posted to 2007 ger introduction moodle by Torsten_Holmer on 2008-06-24 16:49:15 as **
  • Introduced species and their missing parasites.
    Nature, Vol. 421, No. 6923. (6 February 2003), pp. 628-630.
    by ME Torchin, KD Lafferty, AP Dobson, VJ McKenzie, AM Kuris
  • Ten thousand interactions for the molecular biologist
    Nat Biotech, Vol. 22, No. 10. (October 2004), pp. 1317-1321.
    by Patrick Aloy, Robert B Russell
  • Principles of docking: An overview of search algorithms and a guide to scoring functions.
    Proteins, Vol. 47, No. 4. (1 June 2002), pp. 409-443.
    by I Halperin, B Ma, H Wolfson, R Nussinov
  • Proteomics: The society of proteins
    Nature, Vol. 417, No. 6892. (27 June 2002), pp. 894-896.
    by Alison Abbott
    posted to introduction by timg on 2008-08-28 12:35:16 as **
  • On proteins, grids, correlations, and docking
    Comptes Rendus Biologies, Vol. 327, No. 5. (May 2004), pp. 409-420.
    by Miriam Eisenstein, Ephraim Katchalski-Katzir
    posted to fft introduction by timg on 2008-08-28 17:02:33 as **
  • Molecular surface recognition: determination of geometric fit between proteins and their ligands by correlation techniques.
    Proc Natl Acad Sci U S A, Vol. 89, No. 6. (15 March 1992), pp. 2195-2199.
  • The Cell as a Collection of Protein Machines: Preparing the Next Generation of Molecular Biologists
    Cell, Vol. 92, No. 3. (6 February 1998), pp. 291-294.
    by Bruce Alberts
    posted to introduction by timg on 2008-08-28 13:29:17 as **
  • Solvent-Accessible Surfaces of Proteins and Nucleic Acids
    Science, Vol. 221, No. 4612. (1983), pp. 709-713.
    by Michael L Connolly
    posted to introduction surface by timg on 2008-08-28 15:35:01 as **
  • Protein-Protein Docking with Simultaneous Optimization of Rigid-body Displacement and Side-chain Conformations
    Journal of Molecular Biology, Vol. 331, No. 1. (1 August 2003), pp. 281-299.
    by Jeffrey J Gray, Stewart Moughon, Chu Wang, Ora Schueler-Furman, Brian Kuhlman, Carol A Rohl, David Baker
  • Structural Basis of Transcription: RNA Polymerase II at 2.8 Angstrom Resolution
    Science, Vol. 292, No. 5523. (8 June 2001), pp. 1863-1876.
    by Patrick Cramer, David A Bushnell, Roger D Kornberg
    posted to introduction by timg on 2008-08-28 13:34:50 as ** along with 1 person dquest
  • Target selection for complex structural genomics
    Current Opinion in Structural Biology, Vol. 16, No. 3. (June 2006), pp. 385-392.
    by Jeronimo Bravo, Patrick Aloy
  • Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas
    Microelectronic Engineering, Vol. 69, No. 2-4. (September 2003), pp. 350-357.
    posted to introduction resist-trimming by these_morel on 2008-07-11 13:38:16 as **
  • Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 1. (2004), pp. 53-60.
    by TEFM Standaert, C Hedlund, EA Joseph, GS Oehrlein, TJ Dalton
    posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:56:38 as **
  • Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing
    IEEE Transactions on Electron Devices, Vol. 44, No. 9. (1997), pp. 1467-1472.
    by T Ushiki, Mo-Chiun Yu, Y Hirano, H Shimada, M Morita, T Ohmi
    posted to gate introduction metal metal-gate resistivity by these_morel on 2008-05-20 10:02:41 as **
  • Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1199-1211.
    by GS Oehrlein, JF Rembetski, EH Payne
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:33:25 as **
  • Simulation of surface topography evolution during plasma etching by the method of characteristics
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 3. (1994), pp. 620-635.
    by John C Arnold, Herbert H Sawin, Manoj Dalvie, Satoshi Hamaguchi
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:35:13 as **
  • The role of polymer deposited in differential dielectric etch
    The 42nd national symposium of the American Vacuum Society, Vol. 14, No. 3. (1996), pp. 1092-1095.
    by S Fang, C Chiang, D Fraser, B Lee, P Keswick, M Chang, K Fung
    posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:54:36 as **
  • Enhancement of the recombination rate of Br atoms by CF[sub 4] addition and resist etching in HBr/Cl[sub 2]/O[sub 2] plasmas
    Journal of Applied Physics, Vol. 94, No. 10. (2003), pp. 6285-6290.
    by G Cunge, O Joubert, N Sadeghi
    posted to cleaning introduction by these_morel on 2008-07-11 15:12:45 as **
  • Physics of Semiconductor Devices
    (04 November 1981)
    by Simon M Sze
    posted to cmos introduction microelectronics by these_morel on 2008-07-10 13:28:17 as ** along with 1 person kristgy
  • Resist trimming in high-density CF[sub 4]/O[sub 2] plasmas for sub-0.1 mu m device fabrication
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 1974-1981.
    by Chian Y Sin, Bing H Chen, WL Loh, J Yu, P Yelehanka, A See, L Chan
    posted to introduction resist-trimming by these_morel on 2008-07-11 13:35:35 as **
  • Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl[sub 2]/O[sub 2] plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 1. (1997), pp. 88-97.
    by FH Bell, O Joubert
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:31:39 as **
  • CMOS scaling into the nanometer regime
    Proceedings of the IEEE, Vol. 85, No. 4. (1997), pp. 486-504.
    by Yuan Taur, DA Buchanan, Wei Chen, DJ Frank, KE Ismail, Shih-Hsien Lo, GA Sai-Halasz, RG Viswanathan, HJC Wann, SJ Wind, Hon-Sum Wong
    posted to capacitive gate introduction metal by these_morel on 2008-05-20 10:04:37 as **
  • Gate oxide scaling limits and projection
    Electron Devices Meeting, 1996., International (1996), pp. 319-322.
    by Chenming Hu
    posted to eot introduction microelectronics polydepletion tunneling by these_morel on 2008-05-15 15:45:00 as **
  • Ion- and electron-assisted gas-surface chemistry---An important effect in plasma etching
    Journal of Applied Physics, Vol. 50, No. 5. (1979), pp. 3189-3196.
    by JW Coburn, Harold F Winters
    posted to introduction plasma by these_morel on 2008-07-03 15:57:45 as **
  • Dry etching for pattern transfer
    Journal of Vacuum Science and Technology, Vol. 17, No. 5. (1980), pp. 1177-1183.
    by HW Lehmann, R Widmer
    posted to etching introduction plasma by these_morel on 2008-07-09 10:18:03 as **
  • Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices
    Electron Device Letters, IEEE, Vol. 18, No. 12. (1997), pp. 580-582.
    by A Gupta, Peng Fang, M Song, Ming-Ren Lin, D Wollesen, K Chen, C Hu
    posted to introduction microelectronics polydepletion by these_morel on 2008-05-16 12:55:02 as **
  • Control of relative etch rates of SiO2 and Si in plasma etching
    Solid-State Electronics, Vol. 18, No. 12. (December 1975), pp. 1146-1147.
    by Rudolf A Heinecke
    posted to introduction plasma by these_morel on 2008-07-04 09:35:31 as **
  • Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl[sub 2]/O[sub 2] high density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 2. (1995), pp. 214-226.
    by KV Guinn, CC Cheng, VM Donnelly
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:30:50 as **
  • The work function of the elements and its periodicity
    Journal of Applied Physics, Vol. 48, No. 11. (1977), pp. 4729-4733.
    by Herbert B Michaelson
    posted to gate introduction metal work-function by these_morel on 2008-05-20 13:59:25 as **
  • Plasma etching---A discussion of mechanisms
    Journal of Vacuum Science and Technology, Vol. 16, No. 2. (1979), pp. 391-403.
    by JW Coburn, Harold F Winters
    posted to introduction plasma by these_morel on 2008-07-03 15:55:00 as **
  • Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, No. 5. (2000), pp. 2122-2129.
    by MJ Sowa, ME Littau, V Pohray, JL Cecchi
    posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:55:38 as **
  • Characteristics and mechanism of etch process sensitivity to chamber surface condition
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 1. (2001), pp. 166-171.
    by Songlin Xu, Zhiwen Sun, Xueyu Qian, John Holland, Dragan Podlesnik
    posted to cleaning introduction by these_morel on 2008-07-11 15:10:19 as **
  • Complete re-estimation of the gate leakage current limit for sub-0.12um technologies (EOT= 1.8-2.8nm)
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European (2000), pp. 304-307.
    by M Bidaud, F Arnaud, JL Autran, K Barla
    posted to tunneling introduction by these_morel on 2008-10-01 09:22:34 as **
  • X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 2. (2001), pp. 420-426.
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:32:30 as **
  • Deep-submicrometer MOS device fabrication using a photoresist-ashing technique
    Electron Device Letters, IEEE, Vol. 9, No. 4. (1988), pp. 186-188.
    by J Chung, M Jeng, JE Moon, AT Wu, TY Chan, PK Ko, C Hu
    posted to introduction resist-trimming by these_morel on 2008-07-11 13:24:20 as **
  • The reaction of fluorine atoms with silicon
    Journal of Applied Physics, Vol. 52, No. 5. (1981), pp. 3633-3639.
    by Daniel L Flamm, Vincent M Donnelly, John A Mucha
    posted to introduction plasma by these_morel on 2008-07-04 09:08:59 as **
  • Microprofile simulations for plasma etching with surface passivation
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 5. (1994), pp. 2745-2753.
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:36:20 as **
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