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Ключевое слово ion-implanted [92 articles]

Recent papers classified by the tag ion-implanted.
  • Accurate depth profiling for ultra-shallow implants using backside-SIMS
    Applied Surface Science, Vol. 231-232 (15 June 2004), pp. 673-677.
    by Chie Hongo, Mitsuhiro Tomita, Miyuki Takenaka
    posted to ion-implanted by rice on 2008-04-24 05:53:09 as **
  • Polysilylenes: charge carrier transport and photogeneration
    Journal of Organometallic Chemistry, Vol. 685, No. 1-2. (15 November 2003), pp. 269-279.
    by Stanislav Nespurek, Julinz Sworakowski, Andrey Kadashchuk, Petr Toman
    posted to ion-implanted by rice on 2008-04-24 06:35:20 as **
  • Degradation of carrier lifetime in Cz silicon solar cells
    Solar Energy Materials and Solar Cells, Vol. 65, No. 1-4. (January 2001), pp. 219-229.
    by SW Glunz, S Rein, W Warta, J Knobloch, W Wettling
    posted to ion-implanted by rice on 2008-04-24 06:05:48 as **
  • Comprehensive modeling of ion-implant amorphization in silicon
    Materials Science and Engineering: B, Vol. 124-125 (5 December 2005), pp. 383-385.
    by KRC Mok, M Jaraiz, I Martin-Bragado, JE Rubio, P Castrillo, R Pinacho, MP Srinivasan, F Benistant
    posted to ion-implanted by rice on 2008-04-24 05:59:33 as **
  • Photoluminescence thermal quenching behaviors of Er-doped SiOx (x<2) prepared by ion implantation
    Physica B: Condensed Matter, Vol. 362, No. 1-4. (15 May 2005), pp. 208-213.
    by CS Zhang, Xiao, YJ Wang, ZJ Cheng, XL Cheng, F Zhang
    posted to ion-implanted by rice on 2008-04-24 06:35:15 as **
  • Amorphous zone evolution in Si during elevated temperature ion bombardment
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 174, No. 1-2. (March 2001), pp. 130-136.
    by SO Kucheyev
    posted to ion-implanted by rice on 2008-04-24 05:54:20 as **
  • Diffusion profiles of low dosages chromium ions implanted into (1 0 0) crystalline silicon
    Materials Science in Semiconductor Processing, Vol. 9, No. 1-3. ( 2006), pp. 62-65.
    by F Salman, P Zhang, L Chow, FA Stevie
    posted to ion-implanted by rice on 2008-04-24 06:05:56 as **
  • Heavy ion induced damage in crystalline silicon and diodes
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 156, No. 1-4. (2 July 1999), pp. 72-77.
    by P Sathyavathi, ST Chavan, D Kanjilal, VN Bhoraskar
    posted to ion-implanted by rice on 2008-04-24 06:27:25 as **
  • Design and development of two-dimensional position sensitive photo-detector
    Microelectronics Journal, Vol. 36, No. 11. (November 2005), pp. 1023-1025.
    by RCG da Silva, H Boudinov, RRB Correia
    posted to ion-implanted by rice on 2008-04-24 06:05:54 as **
  • Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 777-779.
    by Ihaddadene-Le, J Marcon, A Dush-Nicolini, K Masmoudi, K Ketata
    posted to ion-implanted by rice on 2008-04-24 06:34:47 as **
  • Atomistic modeling of ion beam induced amorphization in silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 216 (February 2004), pp. 41-45.
    by Lourdes Pelaz, Luis A Marqués, Maria Aboy, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 05:53:36 as **
  • Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants
    Applied Surface Science, Vol. 252, No. 19. (30 July 2006), pp. 7214-7217.
    by D Giubertoni, M Bersani, M Barozzi, S Pederzoli, E Iacob, JA van den Berg, M Werner
    posted to ion-implanted by rice on 2008-04-24 05:59:30 as **
  • Ultra shallow junction formation and dopant activation study of Ga implanted Si
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 237, No. 1-2. (August 2005), pp. 121-125.
    by R Gwilliam, S Gennaro, G Claudio, BJ Sealy, C Mulcahy, S Biswas
    posted to ion-implanted by rice on 2008-04-24 06:42:11 as **
  • Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator
    Materials Science and Engineering B, Vol. 114-115 (15 December 2004), pp. 251-254.
    by Peng Chen, Zhenghua An, Ming Zhu, Ricky K Fu, Paul K Chu, Neil Montgomery, Sukanta Biswas
    posted to ion-implanted by rice on 2008-04-24 06:26:53 as **
  • SIMS backside depth profiling of ultra shallow implants
    Applied Surface Science, Vol. 203-204 (15 January 2003), pp. 335-338.
    by KL Yeo, ATS Wee, A See, R Liu, CM Ng
    posted to ion-implanted by rice on 2008-04-24 05:53:14 as **
  • Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon
    Materials Science in Semiconductor Processing, Vol. 2, No. 1. (April 1999), pp. 35-44.
    by V Privitera, E Napolitani, F Priolo, S Moffatt, A La Magna, G Mannino, A Carnera, A Picariello
    posted to ion-implanted by rice on 2008-04-24 05:53:26 as **
  • Study of defects in ion-implanted silicon using photoluminescence and positron annihilation
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 738-742.
    by R Harding, G Davies, PG Coleman, CP Burrows, J Wong-Leung
    posted to ion-implanted by rice on 2008-04-24 06:42:02 as **
  • Ion implantation effects in silicon with high carbon content characterised by photoluminescence
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 714-718.
    by Jin Tan, Gordon Davies, Shusaku Hayama, Ruth Harding, Jennifer Wong-Leung
    posted to ion-implanted by rice on 2008-04-24 06:27:30 as **
  • Optical doping of silicon with erbium by ion implantation
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 80-81, No. Part 1. (3 June 1993), pp. 653-658.
    by A Polman, JS Custer, E Snoeks, GN van den Hoven
    posted to ion-implanted by rice on 2008-04-24 06:27:20 as **
  • Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic
    Applied Surface Science, Vol. 252, No. 19. (30 July 2006), pp. 7286-7289.
    by M Barozzi, D Giubertoni, S Pederzoli, M Anderle, E Iacob, M Bersani
    posted to ion-implanted by rice on 2008-04-24 06:27:01 as **
  • Investigation of minority carrier diffusion length in shallow junctions by angle-resolved illumination technique
    Materials Science and Engineering B, Vol. 102, No. 1-3. (15 September 2003), pp. 179-183.
    by A Parretta, P Grillo, M Tucci
    posted to ion-implanted by rice on 2008-04-24 06:27:11 as **
  • A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations
    Materials Science and Engineering B, Vol. 114-115 (15 December 2004), pp. 345-348.
    by I Martin-Bragado, M Jaraiz, P Castrillo, R Pinacho, JE Rubio, J Barbolla
    posted to ion-implanted by rice on 2008-04-24 05:54:19 as **
  • Monte Carlo modeling of amorphization resulting from ion implantation in Si
    Computational Materials Science, Vol. 27, No. 1-2. (March 2003), pp. 1-5.
    by Lourdes Pelaz, Luis A Marqués, María Aboy, George Gilmer, Luis A Bailón, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 06:34:49 as **
  • High resolution deep level transient spectroscopy and process-induced defects in silicon
    Materials Science and Engineering B, Vol. 114-115 (15 December 2004), pp. 307-311.
    by JH Evans-Freeman, D Emiroglu, KD Vernon-Parry
    posted to ion-implanted by rice on 2008-04-24 06:19:34 as **
  • Secondary ion mass spectrometry characterization of indium-implanted silicon wafers
    Applied Surface Science, Vol. 231-232 (15 June 2004), pp. 738-742.
    by C Blackmer-Krasinski, WR Morinville
    posted to ion-implanted by rice on 2008-04-24 06:41:41 as **
  • Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants
    Materials Science and Engineering B, Vol. 114-115 (15 December 2004), pp. 82-87.
    by Pedro Lopez, Lourdes Pelaz, Luis A Marqués, Ivan Santos, Maria Aboy, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 05:53:30 as **
  • Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion
    Materials Science and Engineering A, Vol. 253, No. 1-2. (30 September 1998), pp. 269-274.
    by Aditya Agarwal, Gossmann, DJ Eaglesham, L Pelaz, DC Jacobson, JM Poate, TE Haynes
    posted to ion-implanted by rice on 2008-04-24 05:59:35 as **
  • Characterization of carrier recombination and trapping processes in proton irradiated silicon by microwave absorption transients
    Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 546, No. 1-2. (1 July 2005), pp. 108-112.
    by E Gaubas, J Vaitkus, G Niaura, J Härkönen, E Tuovinen, P Luukka, E Fretwurst
    posted to ion-implanted by rice on 2008-04-24 05:59:27 as **
  • The effective medium approximations: Some recent developments
    Superlattices and Microstructures, Vol. 23, No. 3-4. (March 1998), pp. 567-573.
    by D Stroud
    posted to ion-implanted by rice on 2008-04-24 06:19:03 as **
  • Ultrashallow profiling of semiconductors by secondary ion mass spectrometry: : methods and applications
    Materials Science in Semiconductor Processing, Vol. 4, No. 1-3. (6 February 2001), pp. 55-60.
    by E Napolitani, A Carnera, V Privitera, F Priolo
    posted to ion-implanted by rice on 2008-04-24 06:42:13 as **
  • Mechanisms of amorphization in ion implanted crystalline silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 80-81, No. Part 1. (3 June 1993), pp. 514-518.
    by SU Campisano, S Coffa, V Raineri, F Priolo, E Rimini
    posted to ion-implanted by rice on 2008-04-24 06:27:23 as **
  • Physically based modeling of dislocation loops in ion implantation processing in silicon
    Materials Science and Engineering: B, Vol. 124-125 (5 December 2005), pp. 404-408.
    by P Castrillo, I Martin-Bragado, R Pinacho, M Jaraiz, JE Rubio, KRC Mok, FJ Miguel-Herrero, J Barbolla
    posted to ion-implanted by rice on 2008-04-24 06:35:17 as **
  • Atomistic modeling of ion beam induced amorphization in silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 241, No. 1-4. (December 2005), pp. 501-505.
    by Lourdes Pelaz, Luis A Marqués, Pedro López, Iván Santos, María Aboy, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 05:53:32 as **
  • Investigation of defects in reactive ion-implanted silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 222, No. 1-2. (July 2004), pp. 75-80.
    by G Bhatt, AD Yadav, SK Dubey, Gundu
    posted to ion-implanted by rice on 2008-04-24 06:27:09 as **
  • Photo-carrier transport in nanocrystalline silicon films
    Journal of Non-Crystalline Solids, Vol. 352, No. 9-20. (15 June 2006), pp. 1180-1183.
    by K Shimakawa
    posted to ion-implanted by rice on 2008-04-24 06:35:07 as **
  • Internal friction study of ion-implantation induced defects in silicon
    Materials Science and Engineering: A, Vol. 442, No. 1-2. (20 December 2006), pp. 63-66.
    by Xiao Liu, RO Pohl, DM Photiadis
    posted to ion-implanted by rice on 2008-04-24 06:27:05 as **
  • Electron transport in implant isolation GaAs layers
    Microelectronics Reliability, Vol. 43, No. 4. (April 2003), pp. 675-679.
    by Z Synowiec, B Paszkiewicz
    posted to ion-implanted by rice on 2008-04-24 06:19:07 as **
  • Implanted ZnO thin films: Microstructure, electrical and electronic properties
    Applied Surface Science, Vol. 253, No. 9. (28 February 2007), pp. 4317-4321.
    by J Lee, J Metson, PJ Evans, R Kinsey, D Bhattacharyya
    posted to ion-implanted by rice on 2008-04-24 06:26:58 as **
  • Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 180, No. 1-4. (June 2001), pp. 12-16.
    by Lourdes Pelaz, Luis A Marques, George H Gilmer, Martin Jaraiz, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 05:53:42 as **
  • The effect of generation-recombination mechanisms on the transient behavior of polycrystalline silicon transistors
    Thin Solid Films, Vol. 487, No. 1-2. (1 September 2005), pp. 247-251.
    by GJ Papaioannou, A Voutsas, M Exarchos, D Kouvatsos
    posted to ion-implanted by rice on 2008-04-24 06:42:04 as **
  • Photoluminescence study of self-interstitial clusters and extended defects in ion-implanted silicon
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 734-737.
    by PK Giri
    posted to ion-implanted by rice on 2008-04-24 06:35:12 as **
  • Near-band gap luminescence at room temperature from dislocations in silicon
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 710-713.
    by DJ Stowe, SA Galloway, S Senkader, Kanad Mallik, RJ Falster, PR Wilshaw
    posted to ion-implanted by rice on 2008-04-24 06:34:52 as **
  • Depth distribution of disorder and cavities in high dose helium implanted silicon characterized by spectroscopic ellipsometry
    Thin Solid Films, Vol. 455-456 (1 May 2004), pp. 344-348.
    by P Petrik, F Cayrel, M Fried, O Polgár, T Lohner, L Vincent, D Alquier, J Gyulai
    posted to ion-implanted by rice on 2008-04-24 06:05:51 as **
  • Boron lattice location in room temperature ion implanted Si crystal
    Materials Science and Engineering: B, Vol. 124-125 (5 December 2005), pp. 249-252.
    by AM Piro, L Romano, S Mirabella, MG Grimaldi
    posted to ion-implanted by rice on 2008-04-24 05:59:23 as **
  • High resolution Laplace DLTS studies of defects in ion-implanted silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 186, No. 1-4. (January 2002), pp. 41-45.
    by JH Evans-Freeman, N Abdelgader, PYY Kan, AR Peaker
    posted to ion-implanted by rice on 2008-04-24 06:19:37 as **
  • Electron and hole trapping in thermal oxides that have been ion implanted
    Microelectronic Engineering, Vol. 59, No. 1-4. (November 2001), pp. 285-289.
    by BJ Mrstik, HL Hughes, PJ Mcmarr, P Gouker
    posted to ion-implanted by rice on 2008-04-24 06:19:05 as **
  • Enhanced luminescence from encapsulated silicon nanocrystals in SiO2 with rapid thermal anneal
    Vacuum, Vol. 81, No. 2. (20 September 2006), pp. 179-185.
    by TS Iwayama, T Hama, DE Hole, IW Boyd
    posted to ion-implanted by rice on 2008-04-24 06:19:20 as **
  • SIMS round-robin study of depth profiling of arsenic implants in silicon
    Applied Surface Science, Vol. 203-204 (15 January 2003), pp. 465-469.
    by M Tomita, T Hasegawa, S Hashimoto, S Hayashi, Y Homma, S Kakehashi, Y Kazama, K Koezuka, H Kuroki, K Kusama, Z Li, S Miwa, S Miyaki, Y Okamoto, K Okuno, S Saito, S Sasaki, H Shichi, H Shinohara, F Toujou, Y Ueki, Y Yamamoto
    posted to ion-implanted by rice on 2008-04-24 06:41:58 as **
  • Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry
    Thin Solid Films, Vol. 455-456 (1 May 2004), pp. 239-243.
    by P Petrik, ER Shaaban, T Lohner, G Battistig, M Fried, Garcia, Y Morilla, O Polgár, J Gyulai
    posted to ion-implanted by rice on 2008-04-24 06:27:32 as **
  • Atomistic simulation of ion implantation and its application in Si technology
    Materials Science and Engineering B, Vol. 71, No. 1-3. (14 February 2000), pp. 128-136.
    by Matthias Posselt, Bruno Schmidt, Thomas Feudel, Norbert Strecker
    posted to ion-implanted by rice on 2008-04-24 05:53:44 as **
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