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Ключевое слово physrev [283 articles]

Recent papers classified by the tag physrev.
  • Direct determination of point-defect equilibrium concentrations
    Physical Review B, Vol. 44, No. 16. (15 October 1991), 9064.
    by H Zimmermann, H Ryssel
    posted to physrev by rice on 2008-06-19 15:38:54 as **
  • Hydrogen diffusion and passivation processes in p- and n-type crystalline silicon
    Physical Review B, Vol. 44, No. 12. (1991), 6141.
    by R Rizk, P de Mierry, D Ballutaud, M Aucouturier, D Mathiot
    posted to physrev by rice on 2008-06-19 15:38:52 as **
  • Structural relaxation and defect annihilation in pure amorphous silicon
    Physical Review B, Vol. 44, No. 8. (1991), 3702.
    by S Roorda, WC Sinke, JM Poate, DC Jacobson, S Dierker, BS Dennis, DJ Eaglesham, F Spaepen, P Fuoss
    posted to physrev by rice on 2008-06-19 15:38:50 as **
  • Nonthermal laser-induced recrystallization of amorphous silicon
    Physical Review B, Vol. 44, No. 23. (15 December 1991), 13116.
    by Jeff Bailey, Eicke R Weber, Jon Opsal, Allan Rosencwaig
    posted to physrev by rice on 2008-06-19 15:38:48 as **
  • Correlation of hot-phonon and hot-carrier kinetics in Ge on a picosecond time scale
    Physical Review B, Vol. 43, No. 8. (15 March 1991), 6682.
    by Andreas Othonos, HM van Driel, Jeff F Young, Paul J Kelly
    posted to physrev by rice on 2008-06-19 15:38:46 as **
  • Application of Drude term in the interpretation of crystalline optical activity
    Optics Communications, Vol. 268, No. 1. (1 December 2006), pp. 90-98.
    by Ivo Vysín, Jan Ríha
    posted to physrev by rice on 2008-06-18 14:22:22 as **
  • Surface effects in hydrogenated amorphous silicon studied by photothermal-deflection experiments
    Physical Review B, Vol. 43, No. 18. (15 June 1991), 14488.
    by L Chahed, ML Thèye, D Fournier, JP Roger, AC Boccara, YM Li, WA Turner, W Paul
    posted to physrev by rice on 2008-06-19 15:38:44 as **
  • Optical studies of vertical ambipolar transport and interface recombination velocities in GaAs/Al_0.5Ga_0.5As double-quantum-well heterostructures
    Physical Review B, Vol. 43, No. 17. (15 June 1991), 13992.
    by H Hillmer, A Forchel, T Kuhn, G Mahler, HP Meier
    posted to physrev by rice on 2008-06-19 15:38:42 as ** along with 1 person ina-kassel
  • Near-infrared free-carrier optical absorption in silicon: Effect of first-order phonon-assisted scattering in a nonparabolic conduction band
    Physical Review B, Vol. 41, No. 5. (15 February 1990), 2944.
    by GN Koskowich, M Soma, RB Darling
    posted to physrev by rice on 2008-06-19 15:35:03 as **
  • Collisional, Nonuniform Plasma Sphere Scattering Calculation by FDTD Employing a Drude Model
    International Journal of Infrared and Millimeter Waves, Vol. 28, No. 11. (29 November 2007), pp. 987-992.
    by Yuan Zhong-Cai, Shi Jia-Ming
    posted to physrev by rice on 2008-06-18 14:17:50 as **
  • Absorption-free modulation of electron-interference currents by optical fields using intersubband virtual transitions
    Physical Review B, Vol. 42, No. 14. (15 November 1990), 9248.
    by Akira Shimizu, Kazuhito Fujii, Masahiro Okuda, Masamichi Yamanishi
    posted to physrev by rice on 2008-06-19 15:34:38 as **
  • Photoluminescence study of radiative channels in ion-implanted silicon
    Physical Review B, Vol. 42, No. 9. (1990), 5635.
    by OO Awadelkarim, A Henry, B Monemar, JL Lindström, Y Zhang, JW Corbett
    posted to physrev by rice on 2008-06-19 15:34:35 as **
  • Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous silicon
    Physical Review B, Vol. 41, No. 8. (15 March 1990), 5235.
    by Francesco Priolo, Corrado Spinella, Emanuele Rimini
    posted to physrev by rice on 2008-06-19 15:34:34 as **
  • Ultrafast recombination and trapping in amorphous silicon
    Physical Review B, Vol. 41, No. 5. (15 February 1990), 2879.
    by A Esser, K Seibert, H Kurz, GN Parsons, C Wang, BN Davidson, G Lucovsky, RJ Nemanich
    posted to physrev by rice on 2008-06-19 15:34:28 as **
  • Carrier dynamics of electrons and holes in moderately doped silicon
    Physical Review B, Vol. 41, No. 17. (15 June 1990), 12140.
    by Martin van Exter, D Grischkowsky
    posted to physrev by rice on 2008-06-19 15:34:26 as **
  • A unified formalism for many-body polarization and dispersion: The quantum Drude model applied to fluid xenon
    Chem. Phys. Lett., Vol. 424, No. 4-6. (2006), pp. 409-413.
    by TW Whitfield, GJ Martyna
    posted to physrev by rice on 2008-06-18 14:13:35 as ** along with 1 person softsimu
  • Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of Traps
    Physical Review B, Vol. 4, No. 2. (15 July 1971), 502.
    by JG Simmons, GW Taylor
    posted to physrev by rice on 2008-06-19 15:34:24 as **
  • Minority Carriers in Graphite
    Physical Review B, Vol. 4, No. 10. (15 November 1971), 3393.
    by John A Woollam
    posted to physrev by rice on 2008-06-19 15:34:21 as **
  • Screening of Excitons in Semiconductors
    Physical Review B, Vol. 4, No. 8. (15 October 1971), 2567.
    by JG Gay
    posted to physrev by rice on 2008-06-19 15:34:19 as **
  • Local environment of arsenic impurities in semi-insulating polycrystalline silicon
    Physical Review B, Vol. 39, No. 5. (15 February 1989), 3131.
    by E Canova, YH Kao, T Marshall, Emil Arnold
    posted to physrev by rice on 2008-06-19 15:34:18 as **
  • Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers
    Journal of Applied Physics, Vol. 103, No. 12. (2008)
    by Xianming Liu, Bincheng Li, Xiren Zhang
    posted to physrev by rice on 2008-06-19 14:45:46 as **
  • Infrared spectroscopic ellipsometry using a Fourier transform infrared spectrometer: Some applications in thin-film characterization
    Review of Scientific Instruments, Vol. 60, No. 10. (1989), pp. 3212-3216.
    by F Ferrieu
    posted to physrev by rice on 2008-06-18 14:04:33 as **
  • Optical characterization of wide band gap amorphous semiconductors (a-Si:C:H): Effect of hydrogen dilution
    Journal of Applied Physics, Vol. 89, No. 2. (2001), pp. 1130-1137.
    by Minseo Park, CW Teng, V Sakhrani, MB Mclaurin, RM Kolbas, RC Sanwald, RJ Nemanich, JJ Hren, JJ Cuomo
    posted to physrev by rice on 2008-06-18 14:02:55 as **
  • A study of Si implanted with oxygen using spectroscopic ellipsometry
    Journal of Applied Physics, Vol. 67, No. 12. (1990), pp. 7211-7222.
    by PJ Mcmarr, BJ Mrstik, MS Barger, G Bowden, JR Blanco
    posted to physrev by rice on 2008-06-18 14:01:57 as **
  • Interband critical points of GaAs and their temperature dependence
    Physical Review B, Vol. 35, No. 17. (15 June 1987), 9174.
    by P Lautenschlager, M Garriga, S Logothetidis, M Cardona
    posted to physrev by rice on 2008-06-19 15:30:12 as **
  • Spectroscopic ellipsometry studies of very thin thermally grown SiO[sub 2] films: Influence of oxidation procedure on oxide quality and stress
    Journal of Applied Physics, Vol. 78, No. 6. (1995), pp. 4164-4173.
    by S Boultadakis, S Logothetidis, A Papadopoulos, N Vouroutzis, Ph, D Girginoudi, A Thanailakis
    posted to physrev by rice on 2008-06-18 14:01:54 as **
  • Laser-induced free-carrier and temperature gratings in silicon
    Physical Review B, Vol. 36, No. 6. (1987), 3247.
    by HJ Eichler, F Massmann, E Biselli, K Richter, M Glotz, L Konetzke, And X Yang
    posted to physrev by rice on 2008-06-19 15:30:10 as **
  • Nondestructive measurement of thickness and carrier concentration of GaAs epitaxial layer using infrared spectroscopic ellipsometry
    Journal of Applied Physics, Vol. 83, No. 3. (1998), pp. 1384-1389.
    by H Nakano, T Sakamoto, K Taniguchi
    posted to physrev by rice on 2008-06-18 14:01:53 as **
  • Temperature dependence of the dielectric function and interband critical points in silicon
    Physical Review B, Vol. 36, No. 9. (1987), 4821.
    by P Lautenschlager, M Garriga, L Vina, M Cardona
    posted to physrev by rice on 2008-06-19 15:30:07 as **
  • Silicon amorphization during ion implantation as a thermal phenomenon
    Physical Review B, Vol. 36, No. 10. (1 October 1987), 5131.
    by GF Cerofolini, L Meda
    posted to physrev by rice on 2008-06-19 15:30:04 as **
  • Phonon scattering at silicon crystal surfaces
    Physical Review B, Vol. 36, No. 12. (15 October 1987), 6551.
    by Tom Klitsner, RO Pohl
    posted to physrev by rice on 2008-06-19 15:30:01 as **
  • Fundamental optical properties of heavily-boron-doped silicon
    Physical Review B, Vol. 36, No. 18. (15 December 1987), 9563.
    by A Borghesi, P Bottazzi, G Guizzetti, L Nosenzo, A Stella, SU Campisano, E Rimini, F Cembali, M Servidori
    posted to physrev by rice on 2008-06-19 15:29:59 as **
  • Real-time monitoring and process control in amorphous/crystalline silicon heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy
    Applied Physics Letters, Vol. 86, No. 3. (2005)
    by Hiroyuki Fujiwara, Michio Kondo
    posted to physrev by rice on 2008-06-18 13:59:16 as **
  • Effect of first-order phonon-assisted scattering on near-infrared free-carrier optical absorption in silicon
    Physical Review B, Vol. 38, No. 2. (15 July 1988), 1281.
    by GN Koskowich, RB Darling, M Soma
    posted to physrev by rice on 2008-06-19 15:29:57 as **
  • Optical properties of cobalt clusters implanted in thin silica layers
    Physical Review B (Condensed Matter and Materials Physics), Vol. 74, No. 4. (2006)
    by M Gilliot, En A Naciri, L Johann, JP Stoquert, JJ Grob, D Muller, M Stchakovsky
    posted to physrev by rice on 2008-06-21 03:22:12 as **
  • Electron drift mobility in doped amorphous silicon
    Physical Review B, Vol. 38, No. 8. (1988), 5603.
    by RA Street, J Kakalios, M Hack
    posted to physrev by rice on 2008-06-19 15:29:55 as **
  • Optical properties of pentacene thin films and single crystals
    Physical Review B (Condensed Matter and Materials Physics), Vol. 74, No. 12. (2006)
    by Daniel Faltermeier, Bruno Gompf, Martin Dressel, Ashutosh K Tripathi, Jens Pflaum
    posted to physrev by rice on 2008-06-21 03:20:59 as **
  • Photothermal deflection method for monitoring photoelectronic and nonradiative energy conversion in semiconductor photoelectrochemical cells
    Physical Review B, Vol. 38, No. 14. (15 November 1988), 9920.
    by Robert E Wagner, Andreas Mandelis
    posted to physrev by rice on 2008-06-19 15:29:51 as **
  • Determination of semiconductor band gap state parameters from photoconductivity measurements. II. Experimental results
    Physical Review B (Condensed Matter and Materials Physics), Vol. 73, No. 23. (2006)
    by C Longeaud, JA Schmidt, RR Koropecki
    posted to physrev by rice on 2008-06-21 03:20:56 as **
  • Infrared ellipsometry of GaAs epilayers on Si(100)
    Applied Physics Letters, Vol. 82, No. 11. (2003), pp. 1730-1732.
    by G Yu, NL Rowell, DJ Lockwood, T Soga
    posted to physrev by rice on 2008-06-18 13:58:43 as **
  • Optical free-carrier absorption of an electron-hole plasma in silicon
    Physical Review B, Vol. 39, No. 15. (15 May 1989), 10825.
    by Bo E Sernelius
    posted to physrev by rice on 2008-06-19 15:29:49 as **
  • Determination of semiconductor band gap state parameters from photoconductivity measurements. I. Theoretical developments
    Physical Review B (Condensed Matter and Materials Physics), Vol. 73, No. 23. (2006)
    by C Longeaud, JA Schmidt, JP Kleider
    posted to physrev by rice on 2008-06-21 03:20:55 as **
  • Radiation damage in silicon exposed to high-energy protons
    Physical Review B (Condensed Matter and Materials Physics), Vol. 73, No. 16. (2006)
    by Gordon Davies, Shusaku Hayama, Leonid Murin, Reinhard K Rehberg, Vladimir Bondarenko, Asmita Sengupta, Cinzia Davia, Anna Karpenko
    posted to physrev by rice on 2008-06-21 03:20:54 as **
  • Fast diffusion mechanism of silicon tri-interstitial defects
    Physical Review B (Condensed Matter and Materials Physics), Vol. 72, No. 24. (2005)
    by Yaojun A Du, Stephen A Barr, Kaden RA Hazzard, Thomas J Lenosky, Richard G Hennig, John W Wilkins
    posted to physrev by rice on 2008-06-21 03:20:53 as **
  • Analytic model of carrier mobility in doped disordered organic semiconductors
    Physical Review B (Condensed Matter and Materials Physics), Vol. 72, No. 23. (2005)
    by VI Arkhipov, EV Emelianova, P Heremans, H Bässler
    posted to physrev by rice on 2008-06-21 03:20:53 as **
  • In situ determination of dielectric functions and optical gap of ultrathin amorphous silicon by real time spectroscopic ellipsometry
    Applied Physics Letters, Vol. 59, No. 20. (1991), pp. 2543-2545.
    by Ilsin An, YM Li, CR Wronski, HV Nguyen, RW Collins
    posted to physrev by rice on 2008-06-18 13:57:16 as **
  • Coexistence of fast and slow luminescence in three-dimensional Si/Si[sub 1 - x]Ge[sub x] nanostructures
    Physical Review B (Condensed Matter and Materials Physics), Vol. 72, No. 19. (2005)
    by BV Kamenev, L Tsybeskov, JM Baribeau, DJ Lockwood
    posted to physrev by rice on 2008-06-21 03:20:52 as **
  • Optical properties of silicon nanocrystals embedded in a SiO[sub 2] matrix
    Physical Review B (Condensed Matter and Materials Physics), Vol. 72, No. 12. (2005)
    by L Ding, TP Chen, Y Liu, CY Ng, S Fung
    posted to physrev by rice on 2008-06-21 03:20:47 as **
  • Raman scattering from ion-implanted silicon
    Physical Review B, Vol. 32, No. 10. (15 November 1985), 6688.
    by KP Jain, AK Shukla, R Ashokan, SC Abbi, M Balkanski
    posted to physrev by rice on 2008-06-19 15:27:21 as **
  • Raman scattering from ultraheavily-ion-implanted and laser-annealed silicon
    Physical Review B, Vol. 34, No. 12. (15 December 1986), 8950.
    by AK Shukla, KP Jain
    posted to physrev by rice on 2008-06-19 15:27:18 as **
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