Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits—DC Analysis and Modeling Toward Optimum Transistor Structure

@article{citeulike:2445210, abstract = {Scaling of silicon technology continues while a research has started in other novel materials for future technology generations beyond year 2015. Carbon nanotubes (CNTs) with their excellent carrier mobility are a promising candidate. The authors investigated different CNT-based field effect transistors (CNFETs) for an optimal switch. Schottky-barrier (SB) CNFETs, MOS CNFETs, and state-of-the-art Si MOSFETs were systematically compared from a circuit/system design perspective. The authors have performed a dc analysis and determined how noise margin and voltage swing vary as a function of tube diameter and power-supply voltage. The dc analysis of single-tube SB CNFET transistors revealed that the optimum CNT diameter for achieving the best I_ON-to-I_OFF ratio while maintaining a good noise margin is about 1 to 1.5 nm. Despite several serious technological barriers and challenges, CNTs show a potential for future high-performance devices as they are being researched}, author = {Raychowdhury, A. and Keshavarzi, A. and Kurtin, J. and De, V. and Roy, K. }, booktitle = {Electron Devices, IEEE Transactions on}, citeulike-article-id = {2445210}, doi = {10.1109/TED.2006.883816}, journal = {Electron Devices, IEEE Transactions on}, keywords = {cnt, modeling, nanoelectronics}, number = {11}, pages = {2711--2717}, posted-at = {2008-02-28 20:48:38}, priority = {2}, title = {Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits\&\#8212;DC Analysis and Modeling Toward Optimum Transistor Structure}, url = {http://dx.doi.org/10.1109/TED.2006.883816}, volume = {53}, year = {2006} }

TY - JOUR ID - citeulike:2445210 L3 - citeulike-article-id:2445210 TI - Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits—DC Analysis and Modeling Toward Optimum Transistor Structure T2 - Electron Devices, IEEE Transactions on JF - Electron Devices, IEEE Transactions on VL - 53 IS - 11 SP - 2711 EP - 2717 N2 - Scaling of silicon technology continues while a research has started in other novel materials for future technology generations beyond year 2015. Carbon nanotubes (CNTs) with their excellent carrier mobility are a promising candidate. The authors investigated different CNT-based field effect transistors (CNFETs) for an optimal switch. Schottky-barrier (SB) CNFETs, MOS CNFETs, and state-of-the-art Si MOSFETs were systematically compared from a circuit/system design perspective. The authors have performed a dc analysis and determined how noise margin and voltage swing vary as a function of tube diameter and power-supply voltage. The dc analysis of single-tube SB CNFET transistors revealed that the optimum CNT diameter for achieving the best I_ON-to-I_OFF ratio while maintaining a good noise margin is about 1 to 1.5 nm. Despite several serious technological barriers and challenges, CNTs show a potential for future high-performance devices as they are being researched KW - cnt KW - modeling KW - nanoelectronics AU - Raychowdhury, A AU - Keshavarzi, A AU - Kurtin, J AU - De, V AU - Roy, K PY - 2006/// UR - http://dx.doi.org/10.1109/TED.2006.883816 ER -