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mpickett library [261 articles]

Статьи, недавно добавленные в библиотеку mpickett .
  • Memristive switching mechanism for metal//oxide//metal nanodevices
    Nat Nano, Vol. 3, No. 7. (July 2008), pp. 429-433.
    by Joshua J Yang, Matthew D Pickett, Xuema Li, Douglas A Ohlberg, Duncan R Stewart, Stanley R Williams
    posted to titanium resistance-switch oxide c-auth by mpickett on 2008-07-14 02:59:12 as read
  • The missing memristor found
    Nature, Vol. 453, No. 7191., pp. 80-83.
    by Dmitri B Strukov, Gregory S Snider, Duncan R Stewart, Stanley R Williams
    posted to memristor by mpickett on 2008-05-01 00:44:06 as read along with 8 people austin peskin realyou sidr stringertheory JayDugger eyliu wmppaul
  • Memristor-The missing circuit element
    Circuits Theory, IEEE Transactions on [legacy, pre - 1988], Vol. 18, No. 5. (1971), pp. 507-519.
    by L Chua
    posted to memristor by mpickett on 2008-04-10 23:30:11 as read along with 1 person sidr
  • MEMRISTIVE DEVICES AND SYSTEMS.
    Proc IEEE, Vol. 64, No. 2. (1976), pp. 209-223.
    by Leon O Chua, Sung M Kang
    posted to memristor by mpickett on 2008-04-10 23:07:04 as read
  • The crossbar latch: Logic value storage, restoration, and inversion in crossbar circuits
    Journal of Applied Physics, Vol. 97, No. 3. (2005)
    by Philip J Kuekes, Duncan R Stewart, Stanley R Williams
    posted to crossbar logic by mpickett on 2008-04-10 19:07:17 as read along with 1 person ewmoore
  • Nano/CMOS architectures using a field-programmable nanowire interconnect
    Nanotechnology, Vol. 18, No. 3. (2007)
    by Gregory S Snider, Stanley R Williams
    posted to architecture cmol crossbar by mpickett on 2008-04-10 19:00:49 as read along with 1 person mmuecke
  • Defect-tolerant Logic with Nanoscale Crossbar Circuits
    Journal of Electronic Testing, Vol. 23, No. 2-3. (June 2007), pp. 117-129.
    by Hogg, Tad, Snider, Greg
    posted to cmol crossbar defect-tolerant logic by mpickett on 2008-04-10 18:55:41 as read
  • Self-organized computation with unreliable, memristive nanodevices
    Nanotechnology, Vol. 18, No. 36. (2007), 365202.
    by GS Snider
    posted to crossbar neuromorphic by mpickett on 2008-04-10 18:53:12 as read along with 1 person peskin
  • CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices
    Nanotechnology, Vol. 16, No. 6. (2005), pp. 888-900.
    by Dmitri B Strukov, Konstantin K Likharev
    posted to cmol crossbar routing by mpickett on 2008-04-10 18:51:06 as read
  • Hysteretic current--voltage characteristics and resistance switching at a rectifying Ti/Pr[sub 0.7]Ca[sub 0.3]MnO[sub 3] interface
    Applied Physics Letters, Vol. 85, No. 18. (2004), pp. 4073-4075.
    by A Sawa, T Fujii, M Kawasaki, Y Tokura
    posted to oxide pcmo resistance-switch by mpickett on 2008-04-09 20:25:03 as read
  • Colossal electroresistance of a Pr0.7Ca0.3MnO 3 thin film at room temperature
    Phys. Rev. B Condens. Matter Mater. Phys., Vol. 70, No. 22. (2004)
    by A Odagawa, H Sato, IH Inoue, H Akoh, M Kawasaki, Y Tokura, T Kanno, H Adachi
    posted to oxide pcmo resistance-switch by mpickett on 2008-04-09 20:22:11 as read
  • Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag--La[sub 0.7]Ca[sub 0.3]MnO[sub 3]--Pt sandwiches
    Applied Physics Letters, Vol. 86, No. 17. (2005)
    by R Dong, Q Wang, LD Chen, DS Shang, TL Chen, XM Li, WQ Zhang
    posted to lcmo resistance-switch by mpickett on 2008-04-09 20:12:03 as read
  • Localized metallic conductivity and self-healing during thermal reduction of SrTiO3
    Phys Rev Lett, Vol. 88, No. 7. (2002), pp. 755081-755084.
    by K Szot, W Speier, R Carius, U Zastrow, W Beyer
    posted to conduction srtio by mpickett on 2008-04-09 20:07:10 as read
  • Conductivity switching characteristics and reset currents in NiO films
    Applied Physics Letters, Vol. 86, No. 9. (2005)
    by S Seo, MJ Lee, DH Seo, SK Choi, DS Suh, YS Joung, IK Yoo, IS Byun, IR Hwang, SH Kim, BH Park
    posted to nickel oxide resistance-switch by mpickett on 2008-04-09 20:00:48 as read
  • Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted
    Applied Physics Letters, Vol. 92, No. 1. (2008)
    by Qi Liu, Weihua Guan, Shibing Long, Rui Jia, Ming Liu, Junning Chen
    posted to oxide resistance-switch space-charge-limited zirconium by mpickett on 2008-04-09 19:38:34 as read
  • Modified resistive switching behavior of ZrO[sub 2] memory films based on the interface layer formed by using Ti top electrode
    Journal of Applied Physics, Vol. 102, No. 9. (2007)
    by Chih Y Lin, Chung Y Wu, Chen Y Wu, Tseung Y Tseng, Chenming Hu
    posted to oxide resistance-switch zirconium by mpickett on 2008-04-09 19:34:38 as read
  • Liquid injection ALD of Pb (Zr,Ti) Ox thin films by a combination of self-regulating component oxide processes
    J Electrochem Soc, Vol. 154, No. 12. (2007)
    by T Watanabe, S Hoffmann-Eifert, F Peter, S Mi, C Jia, CS Hwang, R Waser
    posted to atomic-layer-deposition oxide resistance-switch titanium by mpickett on 2008-04-09 19:32:39 as read
  • Localized switching mechanism in resistive switching of atomic-layer-deposited TiO[sub 2] thin films
    Applied Physics Letters, Vol. 90, No. 24. (2007)
    by Kyung M Kim, Byung J Choi, Cheol S Hwang
    posted to filament oxide resistance-switch titanium by mpickett on 2008-04-09 19:29:19 as read
  • Switching characteristics of Cu[sub 2]O metal-insulator-metal resistive memory
    Applied Physics Letters, Vol. 91, No. 12. (2007)
    by A Chen, S Haddad, YC Wu, Z Lan, TN Fang, S Kaza
    posted to copper oxide resistance-switch by mpickett on 2008-04-09 19:28:18 as read
  • Anode-interface localized filamentary mechanism in resistive switching of TiO[sub 2] thin films
    Applied Physics Letters, Vol. 91, No. 1. (2007)
    by Kyung M Kim, Byung J Choi, Yong C Shin, Seol Choi, Cheol S Hwang
    posted to conduction oxide resistance-switch space-charge-limited titanium by mpickett on 2008-04-09 19:26:25 as read
  • Resistance switching of copper doped MoO[sub x] films for nonvolatile memory applications
    Applied Physics Letters, Vol. 90, No. 12. (2007)
    by Dongsoo Lee, Dong J Seong, Inhwa Jo, F Xiang, R Dong, Seokjoon Oh, Hyunsang Hwang
    posted to molybdenum oxide resistance-switch by mpickett on 2008-04-09 19:21:39 as read
  • Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films
    Applied Physics Letters, Vol. 90, No. 5. (2007)
    by Kyooho Jung, Hongwoo Seo, Yongmin Kim, Hyunsik Im, Jinpyo Hong, Jae W Park, Jeon K Lee
    posted to conduction nickel oxide resistance-switch by mpickett on 2008-04-09 19:19:01 as read
  • Low-power switching of nonvolatile resistive memory using hafnium oxide
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, Vol. 46, No. 4 B. (2007), pp. 2175-2179.
    by HY Lee, PS Chen, CC Wang, S Maikap, PJ Tzeng, CH Lin, LS Lee, MJ Tsai
    posted to hafnium oxide resistance-switch by mpickett on 2008-04-09 19:16:14 as read
  • Current-driven insulator--conductor transition and nonvolatile memory in chromium-doped SrTiO[sub 3] single crystals
    Applied Physics Letters, Vol. 78, No. 23. (2001), pp. 3738-3740.
    by Y Watanabe, JG Bednorz, A Bietsch, Ch, D Widmer, A Beck, SJ Wind
    posted to oxide resistance-switch srtio by mpickett on 2008-04-09 19:13:31 as read
  • Reversible resistance switching behaviors of Pt/NiO/Pt structures
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, Vol. 46, No. 8 A. (2007), pp. 5205-5207.
    by DW Kim, BH Park, R Jung, S Seo
    posted to nickel oxide resistance-switch by mpickett on 2008-04-09 19:07:42 as read
  • Resistive Switching in Pt/Al[sub 2]O[sub 3]/TiO[sub 2]/Ru Stacked Structures
    Electrochemical and Solid-State Letters, Vol. 9, No. 12. (2006), pp. G343-G346.
    by Kyung M Kim, Byung J Choi, Bon W Koo, Seol Choi, Doo S Jeong, Cheol S Hwang
    posted to aluminum oxide resistance-switch titanium by mpickett on 2008-04-09 19:04:40 as read
  • Impedance spectroscopy characterization of resistance switching NiO thin films prepared through atomic layer deposition
    Applied Physics Letters, Vol. 89, No. 22. (2006)
    by Yil H You, Byung S So, Jin H Hwang, Wontae Cho, Sun S Lee, Taek M Chung, Chang G Kim, Ki S An
    posted to filament nickel oxide resistance-switch by mpickett on 2008-04-09 19:03:59 as read
  • Influence of carrier injection on resistive switching of TiO[sub 2] thin films with Pt electrodes
    Applied Physics Letters, Vol. 89, No. 16. (2006)
    by Kyung M Kim, Byung J Choi, Doo S Jeong, Cheol S Hwang, Seungwu Han
    posted to conduction oxide resistance-switch space-charge-limited titanium trapping by mpickett on 2008-04-09 19:02:15 as read
  • Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La[sub 0.7]Ca[sub 0.3]MnO[sub 3]/Pt heterostructures
    Physical Review B (Condensed Matter and Materials Physics), Vol. 73, No. 24. (2006)
    by DS Shang, Q Wang, LD Chen, R Dong, XM Li, WQ Zhang
    posted to lcmo oxide resistance-switch smooth-switching trapping by mpickett on 2008-04-09 18:59:51 as read
  • Current switching of resistive states in magnetoresistive manganites
    NATURE, Vol. 388, No. 6637. (1997), pp. 50-52.
    by A Asamitsu, Y Tomioka, H Kuwahara, Y Tokura
    posted to lcmo oxide resistance-switch by mpickett on 2008-04-09 18:50:32 as read
  • High-speed resistive switching of TiO2/TiN nano-crystalline thin film
    Jpn J Appl Phys Part 2 Letter, Vol. 45, No. 8-11. (2006)
    by M Fujimoto, H Koyama, Y Hosoi, K Ishihara, S Kobayashi
    posted to oxide resistance-switch tem titanium xrd by mpickett on 2008-04-09 18:35:14 as read
  • Hysteretic current--voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO[sub 3]/SrTi[sub 0.99]Nb[sub 0.01]O[sub 3]
    Applied Physics Letters, Vol. 86, No. 1. (2005)
    by T Fujii, M Kawasaki, A Sawa, H Akoh, Y Kawazoe, Y Tokura
    posted to oxide resistance-switch srruo by mpickett on 2008-04-09 18:28:53 as read
  • Reproducible resistance switching in polycrystalline NiO films
    Applied Physics Letters, Vol. 85, No. 23. (2004), pp. 5655-5657.
    by S Seo, MJ Lee, DH Seo, EJ Jeoung, DS Suh, YS Joung, IK Yoo, IR Hwang, SH Kim, IS Byun, JS Kim, JS Choi, BH Park
    posted to nickel oxide resistance-switch by mpickett on 2008-04-09 18:21:54 as read
  • Unipolar resistive switching in CoFeB/MgO/CoFeB magnetic tunnel junction
    Applied Physics Letters, Vol. 92, No. 11. (2008)
    by Chikako Yoshida, Masaki Kurasawa, Young M Lee, Masaki Aoki, Yoshihiro Sugiyama
    posted to magnesium oxide resistance-switch by mpickett on 2008-04-09 18:19:22 as read
  • A non-filamentary switching action in thermally grown silicon dioxide films
    British Journal of Applied Physics, Vol. 18, No. 1. (1967), pp. 29-32.
    by DR Lamb, PC Rundle
    posted to conduction defect-assisted oxide resistance-switch silicon by mpickett on 2008-04-09 18:05:05 as read
  • New Conduction and Reversible Memory Phenomena in Thin Insulating Films
    Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences (1934-1990), Vol. 301, No. 1464. (3 October 1967), pp. 77-102.
    by JG Simmons, RR Verderber
    posted to oxide resistance-switch silicon by mpickett on 2008-04-08 23:03:15 as read
  • Bistable switching in Zr---ZrO2---Au junctions
    Journal of Non-Crystalline Solids, Vol. 2 (January 1970), pp. 284-291.
    by KC Park, S Basavaiah
    posted to oxide resistance-switch zro by mpickett on 2008-04-08 22:46:00 as read
  • Electrode effects and bistable switching of amorphous Nb2O5 diodes
    Solid-State Electronics, Vol. 13, No. 7. (July 1970), pp. 1033-1038.
    by TW Hickmott, WR Hiatt
    posted to niobium oxide resistance-switch by mpickett on 2008-04-08 22:40:06 as read
  • Bistable switching and memory devices
    Journal of Non-Crystalline Solids, Vol. 2 (January 1970), pp. 316-333.
    by PO Sliva, G Dir, C Griffiths
    posted to resistance-switch by mpickett on 2008-04-08 22:37:37 as read
  • Switching properties of thin Nio films
    Solid-State Electronics, Vol. 7, No. 11. (November 1964), pp. 785-790.
    by JF Gibbons, WE Beadle
    posted to nickel oxide resistance-switch by mpickett on 2008-04-08 22:25:12 as read
  • A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories
    Advanced Materials, Vol. 19, No. 1. (2007), pp. 73-76.
    by MJ Lee, S Seo, DC Kim, SE Ahn, D H Seo, IK Yoo, IG Baek, DS Kim, IS Byun, SH Kim, IR Hwang, JS Kim, SH Jeon, B H Park
    posted to nickel oxide resistance-switch titanium by mpickett on 2008-04-08 22:23:49 as read
  • Monte Carlo simulation of current-voltage characteristics in metal-insulator-metal thin film structures
    Thin Solid Films, Vol. 433, No. 1-2. (2 June 2003), pp. 321-325.
    by S Gravano, E Amr, RD Gould, Abu M Samra
    posted to filament m-i-m resistance-switch by mpickett on 2008-04-08 22:16:44 as read
  • Lowering the switching current of resistance random access memory using a hetero junction structure consisting of transition metal oxides
    Jpn J Appl Phys Part 2 Letter, Vol. 45, No. 37-41. (2006)
    by K Kinoshita, T Tamura, M Aoki, Y Sugiyama, H Tanaka
    posted to nickel oxide resistance-switch titanium by mpickett on 2008-04-08 22:09:11 as read
  • Electrical observations of filamentary conductions for the resistive memory switching in NiO films
    Applied Physics Letters, Vol. 88, No. 20. (2006)
    by DC Kim, S Seo, SE Ahn, DS Suh, MJ Lee, BH Park, IK Yoo, IG Baek, HJ Kim, EK Yim, JE Lee, SO Park, HS Kim, In U Chung, JT Moon, BI Ryu
    posted to filament nickel oxide resistance-switch by mpickett on 2008-04-08 22:01:35 as read
  • Electric-pulse-induced reversible resistance change effect in magnetoresistive films
    Applied Physics Letters, Vol. 76, No. 19. (2000), pp. 2749-2751.
    by SQ Liu, NJ Wu, A Ignatiev
    posted to oxide pcmo resistance-switch by mpickett on 2008-04-08 21:55:58 as read
  • Identification of a determining parameter for resistive switching of TiO[sub 2] thin films
    Applied Physics Letters, Vol. 86, No. 26. (2005)
    by Christina Rohde, Byung J Choi, Doo S Jeong, Seol Choi, Jin S Zhao, Cheol S Hwang
    posted to oxide resistance-switch titanium by mpickett on 2008-04-08 21:51:38 as read
  • Band alignments and defect levels in Si--HfO[sub 2] gate stacks: Oxygen vacancy and Fermi-level pinning
    Applied Physics Letters, Vol. 92, No. 13. (2008)
    by Peter Broqvist, Audrius Alkauskas, Alfredo Pasquarello
    posted to computational interface oxide oxygen-vacancy by mpickett on 2008-04-05 00:25:51 as read
  • Bistable resistive states of amorphous SrRuO[sub 3] thin films
    Applied Physics Letters, Vol. 92, No. 13. (2008)
    by JY Son, YH Shin, CS Park
    posted to oxide resistance-switch srruo by mpickett on 2008-04-05 00:22:50 as read
  • Modular Multi-Level Circuits from Immobilized DNA-Based Logic Gates
    J. Am. Chem. Soc., Vol. 129, No. 48. (5 December 2007), pp. 14875-14879.
    by BM Frezza, SL Cockroft, MR Ghadiri
    posted to dna logic molecular by mpickett on 2008-04-04 17:47:05 as read
  • A model for filament growth and switching in amorphous oxide films
    Journal of Non-Crystalline Solids, Vol. 4 (April 1970), pp. 593-612.
    by G Dearnaley, DV Morgan, AM Stoneham
    posted to amorphous filament forming oxide resistance-switch silicon by mpickett on 2008-04-03 18:12:09 as read
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