Si nanocrystals in silicon nitride: An ellipsometric study using parametric semiconductor models

by: P Basa, P Petrik, M Fried, L Dobos, B Pécz, L Tóth

Physica E: Low-dimensional Systems and Nanostructures, Vol. 38, No. 1-2. (April 2007), pp. 76-79.

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Abstract

Low-pressure chemical vapour deposited Si3N4/nc-Si/Si3N4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. Model Dielectric Function (MDF) was applied to obtain the thickness and the dielectric spectra of the middle nc-Si layer. Sensitive effect of the deposition time was obtained on the MDF parameters. A comparison is presented between the studied samples and reference materials.

@article{citeulike:2711332, abstract = {Low-pressure chemical vapour deposited Si3N4/nc-Si/Si3N4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. Model Dielectric Function (MDF) was applied to obtain the thickness and the dielectric spectra of the middle nc-Si layer. Sensitive effect of the deposition time was obtained on the MDF parameters. A comparison is presented between the studied samples and reference materials.}, author = {Basa, P. and Petrik, P. and Fried, M. and Dobos, L. and P\'{e}cz, B. and T\'{o}th, L. }, booktitle = {Proceedings of the E-MRS 2006 Symposium C: Silicon Nanocrystals for Electronic and Sensing Applications}, citeulike-article-id = {2711332}, doi = {10.1016/j.physe.2006.12.021}, journal = {Physica E: Low-dimensional Systems and Nanostructures}, keywords = {se}, month = {April}, number = {1-2}, pages = {76--79}, posted-at = {2008-04-24 04:19:27}, priority = {2}, title = {Si nanocrystals in silicon nitride: An ellipsometric study using parametric semiconductor models}, url = {http://dx.doi.org/10.1016/j.physe.2006.12.021}, volume = {38}, year = {2007} }

RIS record

TY - JOUR ID - citeulike:2711332 L3 - citeulike-article-id:2711332 TI - Si nanocrystals in silicon nitride: An ellipsometric study using parametric semiconductor models T2 - Proceedings of the E-MRS 2006 Symposium C: Silicon Nanocrystals for Electronic and Sensing Applications JF - Physica E: Low-dimensional Systems and Nanostructures VL - 38 IS - 1-2 SP - 76 EP - 79 N2 - Low-pressure chemical vapour deposited Si3N4/nc-Si/Si3N4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. Model Dielectric Function (MDF) was applied to obtain the thickness and the dielectric spectra of the middle nc-Si layer. Sensitive effect of the deposition time was obtained on the MDF parameters. A comparison is presented between the studied samples and reference materials. KW - se AU - Basa, P AU - Petrik, P AU - Fried, M AU - Dobos, L AU - Pécz, B AU - Tóth, L PY - 2007/04// UR - http://dx.doi.org/10.1016/j.physe.2006.12.021 ER -

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