A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

@article{citeulike:2711510, abstract = {Ion implantation and subsequent annealing are essential stages in today's advanced CMOS processing. Although the dopant implanted profile can be accurately predicted by analytical fits calibrated with SIMS profiles, the damage has to be estimated with a binary collision approximation implant simulator. Some models have been proposed, like the "+n", in an attempt to simplify the anneal simulation. We have used the atomistic kinetic Monte Carlo dados to elucidate which are the implant modeling features most relevant in the simulation of transient enhanced diffusion (TED). For the experimental conditions studied we find that the spatial correlation of the I, V Frenkel pairs is not critical in order to yield the correct I supersaturation, that can be simulated just taking into account the net I-V excess distribution. In contrast to, simulate impurity clustering/deactivation when there is an impurity concentration comparable to the net I-V excess, the full I and V profiles have to be used.}, author = {Martin-Bragado, I. and Jaraiz, M. and Castrillo, P. and Pinacho, R. and Rubio, J. E. and Barbolla, J. }, booktitle = {EMRS 2004, Symposium B, Material Science Issues in Advanced CMOS Source -drain Engineering}, citeulike-article-id = {2711510}, doi = {http://dx.doi.org/10.1016/j.mseb.2004.07.060}, journal = {Materials Science and Engineering B}, keywords = {ion-implanted}, month = {December}, pages = {345--348}, posted-at = {2008-04-24 05:54:19}, priority = {2}, title = {A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations}, url = {http://dx.doi.org/10.1016/j.mseb.2004.07.060}, volume = {114-115}, year = {2004} }

TY - JOUR ID - citeulike:2711510 L3 - citeulike-article-id:2711510 TI - A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations T2 - EMRS 2004, Symposium B, Material Science Issues in Advanced CMOS Source -drain Engineering JF - Materials Science and Engineering B VL - 114-115 SP - 345 EP - 348 N2 - Ion implantation and subsequent annealing are essential stages in today's advanced CMOS processing. Although the dopant implanted profile can be accurately predicted by analytical fits calibrated with SIMS profiles, the damage has to be estimated with a binary collision approximation implant simulator. Some models have been proposed, like the "+n", in an attempt to simplify the anneal simulation. We have used the atomistic kinetic Monte Carlo dados to elucidate which are the implant modeling features most relevant in the simulation of transient enhanced diffusion (TED). For the experimental conditions studied we find that the spatial correlation of the I, V Frenkel pairs is not critical in order to yield the correct I supersaturation, that can be simulated just taking into account the net I-V excess distribution. In contrast to, simulate impurity clustering/deactivation when there is an impurity concentration comparable to the net I-V excess, the full I and V profiles have to be used. KW - ion-implanted AU - Martin-Bragado, I AU - Jaraiz, M AU - Castrillo, P AU - Pinacho, R AU - Rubio, JE AU - Barbolla, J PY - 2004/12/15/ UR - http://dx.doi.org/10.1016/j.mseb.2004.07.060 ER -