Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

@article{citeulike:2711525, author = {Pelaz, Lourdes and Marques, Luis A. and Gilmer, George H. and Jaraiz, Martin and Barbolla, Juan }, citeulike-article-id = {2711525}, doi = {10.1016/S0168-583X(01)00390-1}, journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, keywords = {ion-implanted}, month = {June}, number = {1-4}, pages = {12--16}, posted-at = {2008-04-24 05:53:42}, priority = {2}, title = {Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si}, url = {http://dx.doi.org/10.1016/S0168-583X(01)00390-1}, volume = {180}, year = {2001} }

TY - JOUR ID - citeulike:2711525 L3 - citeulike-article-id:2711525 TI - Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si JF - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms VL - 180 IS - 1-4 SP - 12 EP - 16 KW - ion-implanted AU - Pelaz, Lourdes AU - Marques, Luis AU - Gilmer, George AU - Jaraiz, Martin AU - Barbolla, Juan PY - 2001/06// UR - http://dx.doi.org/10.1016/S0168-583X(01)00390-1 ER -