Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

@article{citeulike:2764035, author = {Fortunato, Elvira M. C. and Barquinha, Pedro M. C. and Pimentel, Ana C. M. B. G. and Gon\ccalves, Alexandra M. F. and Marques, Ant\'onio J. S. and Martins, Rodrigo F. P. and Pereira, Luis M. N. }, citeulike-article-id = {2764035}, journal = {Applied Physics Letters}, keywords = {apl}, number = {13}, pages = {2541--2543}, posted-at = {2008-05-07 07:52:59}, priority = {2}, publisher = {AIP}, title = {Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature}, url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal\&id=APPLAB000085000013002541000001\&idtype=cvips\&gifs=yes}, volume = {85}, year = {2004} }

TY - JOUR ID - citeulike:2764035 L3 - citeulike-article-id:2764035 TI - Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature JF - Applied Physics Letters VL - 85 IS - 13 SP - 2541 EP - 2543 PB - AIP KW - apl AU - Fortunato, Elvira AU - Barquinha, Pedro AU - Pimentel, Ana AU - Gon\ccalves, Alexandra AU - Marques, Ant\'onio AU - Martins, Rodrigo AU - Pereira, Luis PY - 2004/// UR - http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000085000013002541000001&idtype=cvips&gifs=yes ER -