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rice Pelaz [10 articles]

Recent papers posted to rice library by the author Pelaz. You can also see Pelaz everyone.
  • B diffusion and clustering in ion implanted Si: The role of B cluster precursors
    Applied Physics Letters, Vol. 70, No. 17. (1997), pp. 2285-2287.
    by L Pelaz, M Jaraiz, GH Gilmer, HJ Gossmann, CS Rafferty, DJ Eaglesham, JM Poate
    posted to apl by rice on 2008-05-07 06:53:56 as **
  • Ion-beam-induced amorphization and recrystallization in silicon
    Journal of Applied Physics, Vol. 96, No. 11. (2004), pp. 5947-5976.
    by Lourdes Pelaz, Luis A Marqués, Juan Barbolla
    posted to jap by rice on 2008-05-06 10:01:54 as **
  • Monte Carlo modeling of amorphization resulting from ion implantation in Si
    Computational Materials Science, Vol. 27, No. 1-2. (March 2003), pp. 1-5.
    by Lourdes Pelaz, Luis A Marqués, María Aboy, George Gilmer, Luis A Bailón, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 06:34:49 as **
  • Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon
    Materials Science in Semiconductor Processing, Vol. 1, No. 1. (1 April 1998), pp. 17-25.
    by Aditya Agarwal, Gossmann, DJ Eaglesham, L Pelaz, SB Herner, DC Jacobson, TE Haynes, R Simonton
    posted to ion-implanted by rice on 2008-04-24 06:05:46 as **
  • Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion
    Materials Science and Engineering A, Vol. 253, No. 1-2. (30 September 1998), pp. 269-274.
    by Aditya Agarwal, Gossmann, DJ Eaglesham, L Pelaz, DC Jacobson, JM Poate, TE Haynes
    posted to ion-implanted by rice on 2008-04-24 05:59:35 as **
  • Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 180, No. 1-4. (June 2001), pp. 12-16.
    by Lourdes Pelaz, Luis A Marques, George H Gilmer, Martin Jaraiz, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 05:53:42 as **
  • Atomistic modeling of ion beam induced amorphization in silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 216 (February 2004), pp. 41-45.
    by Lourdes Pelaz, Luis A Marqués, Maria Aboy, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 05:53:36 as **
  • Atomistic modeling of ion beam induced amorphization in silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 241, No. 1-4. (December 2005), pp. 501-505.
    by Lourdes Pelaz, Luis A Marqués, Pedro López, Iván Santos, María Aboy, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 05:53:32 as **
  • Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants
    Materials Science and Engineering B, Vol. 114-115 (15 December 2004), pp. 82-87.
    by Pedro Lopez, Lourdes Pelaz, Luis A Marqués, Ivan Santos, Maria Aboy, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 05:53:30 as **
  • Atomistic analysis of the ion beam induced defect evolution
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 216 (February 2004), pp. 100-104.
    by Maria Aboy, Lourdes Pelaz, Luis A Marqués, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 05:53:29 as **
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