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rice ion-implanted [92 articles]

Recent papers added to rice library classified by the tag ion-implanted. You can also see everyone's ion-implanted.
  • Ultrashallow junction formation by point defect engineering
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 1. (2004), pp. 302-305.
    by Lin Shao, Phillip E Thompson, PAW van der Heide, Sanjay Patel, Quak, Xuemei Wang, Hui Chen, Jiarui Liu, Wei K Chu
    posted to ion-implanted by rice on 2008-04-24 06:42:33 as **
  • Ultrashallow profiling of semiconductors by secondary ion mass spectrometry: : methods and applications
    Materials Science in Semiconductor Processing, Vol. 4, No. 1-3. (6 February 2001), pp. 55-60.
    by E Napolitani, A Carnera, V Privitera, F Priolo
    posted to ion-implanted by rice on 2008-04-24 06:42:13 as **
  • Ultra shallow junction formation and dopant activation study of Ga implanted Si
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 237, No. 1-2. (August 2005), pp. 121-125.
    by R Gwilliam, S Gennaro, G Claudio, BJ Sealy, C Mulcahy, S Biswas
    posted to ion-implanted by rice on 2008-04-24 06:42:11 as **
  • The role of defect excesses in damage formation in Si during ion implantation at elevated temperature
    Materials Science and Engineering A, Vol. 253, No. 1-2. (30 September 1998), pp. 240-248.
    by OW Holland, JD Budai, Bent Nielsen
    posted to ion-implanted by rice on 2008-04-24 06:42:09 as **
  • The effect of generation-recombination mechanisms on the transient behavior of polycrystalline silicon transistors
    Thin Solid Films, Vol. 487, No. 1-2. (1 September 2005), pp. 247-251.
    by GJ Papaioannou, A Voutsas, M Exarchos, D Kouvatsos
    posted to ion-implanted by rice on 2008-04-24 06:42:04 as **
  • Study of defects in ion-implanted silicon using photoluminescence and positron annihilation
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 738-742.
    by R Harding, G Davies, PG Coleman, CP Burrows, J Wong-Leung
    posted to ion-implanted by rice on 2008-04-24 06:42:02 as **
  • Strain relaxation of Ge-implanted silicon wafers
    Materials Science and Engineering: B, Vol. 134, No. 2-3. (15 October 2006), pp. 159-164.
    by Qinghua Xiao, Hailing Tu, Qigang Zhou, Qing Chang
    posted to ion-implanted by rice on 2008-04-24 06:42:00 as **
  • SIMS round-robin study of depth profiling of arsenic implants in silicon
    Applied Surface Science, Vol. 203-204 (15 January 2003), pp. 465-469.
    by M Tomita, T Hasegawa, S Hashimoto, S Hayashi, Y Homma, S Kakehashi, Y Kazama, K Koezuka, H Kuroki, K Kusama, Z Li, S Miwa, S Miyaki, Y Okamoto, K Okuno, S Saito, S Sasaki, H Shichi, H Shinohara, F Toujou, Y Ueki, Y Yamamoto
    posted to ion-implanted by rice on 2008-04-24 06:41:58 as **
  • SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 261, No. 1-2. (August 2007), pp. 594-599.
    by CW Magee, RS Hockett, TH Büyüklimanli, I Abdelrehim, JW Marino
    posted to ion-implanted by rice on 2008-04-24 06:41:49 as **
  • Silicon-based light emission after ion implantation
    Optical Materials, Vol. 27, No. 5. (February 2005), pp. 967-972.
    by M Kittler, T Arguirov, A Fischer, W Seifert
    posted to ion-implanted by rice on 2008-04-24 06:41:46 as **
  • Silicon damage studies due to ultra-low-energy ion implantation with heavy species and rapid thermal annealing
    Materials Science in Semiconductor Processing, Vol. 3, No. 4. (1 August 2000), pp. 291-296.
    by S Moffatt, PLF Hemment, S Whelan, DG Armour
    posted to ion-implanted by rice on 2008-04-24 06:41:43 as **
  • Secondary ion mass spectrometry characterization of indium-implanted silicon wafers
    Applied Surface Science, Vol. 231-232 (15 June 2004), pp. 738-742.
    by C Blackmer-Krasinski, WR Morinville
    posted to ion-implanted by rice on 2008-04-24 06:41:41 as **
  • Progress in the physical modeling of carrier illumination
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 24, No. 3. (2006), pp. 1131-1138.
    by Fabian Dortu, Trudo Clarysse, Roger Loo, Bartek Pawlak, Romain Delhougne, Wilfried Vandervorst
    posted to ion-implanted by rice on 2008-04-24 06:39:20 as **
  • Polysilylenes: charge carrier transport and photogeneration
    Journal of Organometallic Chemistry, Vol. 685, No. 1-2. (15 November 2003), pp. 269-279.
    by Stanislav Nespurek, Julinz Sworakowski, Andrey Kadashchuk, Petr Toman
    posted to ion-implanted by rice on 2008-04-24 06:35:20 as **
  • Physically based modeling of dislocation loops in ion implantation processing in silicon
    Materials Science and Engineering: B, Vol. 124-125 (5 December 2005), pp. 404-408.
    by P Castrillo, I Martin-Bragado, R Pinacho, M Jaraiz, JE Rubio, KRC Mok, FJ Miguel-Herrero, J Barbolla
    posted to ion-implanted by rice on 2008-04-24 06:35:17 as **
  • Photoluminescence thermal quenching behaviors of Er-doped SiOx (x<2) prepared by ion implantation
    Physica B: Condensed Matter, Vol. 362, No. 1-4. (15 May 2005), pp. 208-213.
    by CS Zhang, Xiao, YJ Wang, ZJ Cheng, XL Cheng, F Zhang
    posted to ion-implanted by rice on 2008-04-24 06:35:15 as **
  • Photoluminescence study of self-interstitial clusters and extended defects in ion-implanted silicon
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 734-737.
    by PK Giri
    posted to ion-implanted by rice on 2008-04-24 06:35:12 as **
  • Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
    Applied Surface Science, Vol. 252, No. 24. (15 October 2006), pp. 8424-8427.
    by Liwei Shi, Qiang Wang, Yuguo Li, Chengshan Xue, Huizhao Zhuang
    posted to ion-implanted by rice on 2008-04-24 06:35:10 as **
  • Photo-carrier transport in nanocrystalline silicon films
    Journal of Non-Crystalline Solids, Vol. 352, No. 9-20. (15 June 2006), pp. 1180-1183.
    by K Shimakawa
    posted to ion-implanted by rice on 2008-04-24 06:35:07 as **
  • Optimization of pre-amorphization and dopant implant conditions for advanced annealing
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 237, No. 1-2. (August 2005), pp. 35-40.
    by SB Felch, H Graoui, G Tsai, A Mayur
    posted to ion-implanted by rice on 2008-04-24 06:35:05 as **
  • Optical study of implantation damage recovery from Si-implanted GaN
    Solid State Communications, Vol. 133, No. 4. (January 2005), pp. 213-217.
    by James A Fellows, YK Yeo, Mee-Yi Ryu, RL Hengehold
    posted to ion-implanted by rice on 2008-04-24 06:35:03 as **
  • Nondestructive evaluation of as-implanted and annealed ultra shallow junctions by photothermal and photoluminescence heterodyne techniques
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 237, No. 1-2. (August 2005), pp. 30-34.
    by HD Geiler, H Karge, M Wagner, W Lerch, S Paul
    posted to ion-implanted by rice on 2008-04-24 06:35:00 as **
  • Nondestructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry
    Spectrochimica Acta Part B: Atomic Spectroscopy, Vol. 59, No. 8. (31 August 2004), pp. 1243-1249.
    by G Pepponi, C Streli, P Wobrauschek, N Zoeger, K Luening, P Pianetta, D Giubertoni, M Barozzi, M Bersani
    posted to ion-implanted by rice on 2008-04-24 06:34:57 as **
  • Near-field optical mapping of the ion-implanted patterns fabricated in amorphous silicon carbide
    Vacuum, Vol. 79, No. 1-2. (8 July 2005), pp. 94-99.
    by T Tsvetkova, S Takahashi, A Zayats, P Dawson, R Turner, L Bischoff, O Angelov, D Dimova-Malinovska
    posted to ion-implanted by rice on 2008-04-24 06:34:55 as **
  • Near-band gap luminescence at room temperature from dislocations in silicon
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 710-713.
    by DJ Stowe, SA Galloway, S Senkader, Kanad Mallik, RJ Falster, PR Wilshaw
    posted to ion-implanted by rice on 2008-04-24 06:34:52 as **
  • Monte Carlo modeling of amorphization resulting from ion implantation in Si
    Computational Materials Science, Vol. 27, No. 1-2. (March 2003), pp. 1-5.
    by Lourdes Pelaz, Luis A Marqués, María Aboy, George Gilmer, Luis A Bailón, Juan Barbolla
    posted to ion-implanted by rice on 2008-04-24 06:34:49 as **
  • Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 777-779.
    by Ihaddadene-Le, J Marcon, A Dush-Nicolini, K Masmoudi, K Ketata
    posted to ion-implanted by rice on 2008-04-24 06:34:47 as **
  • Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 183, No. 1-2. (July 2001), pp. 154-165.
    by JA van den Berg, S Zhang, S Whelan, DG Armour, RD Goldberg, P Bailey, TCQ Noakes
    posted to ion-implanted by rice on 2008-04-24 06:34:44 as **
  • Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 237, No. 1-2. (August 2005), pp. 336-340.
    by H Graoui, G Conti, M Hilkene, B Mccomb, A Tjandra, MA Foad, D Kouzminov, J Hunter, CJ Hitzman, CA Evans
    posted to ion-implanted by rice on 2008-04-24 06:34:42 as **
  • Ion irradiation of porous silicon: The role of surface states
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 242, No. 1-2. (January 2006), pp. 164-166.
    by LG Jacobsohn, BL Bennett, DW Cooke, RE Muenchausen, M Nastasi
    posted to ion-implanted by rice on 2008-04-24 06:27:35 as **
  • Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry
    Thin Solid Films, Vol. 455-456 (1 May 2004), pp. 239-243.
    by P Petrik, ER Shaaban, T Lohner, G Battistig, M Fried, Garcia, Y Morilla, O Polgár, J Gyulai
    posted to ion-implanted by rice on 2008-04-24 06:27:32 as **
  • Ion implantation effects in silicon with high carbon content characterised by photoluminescence
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 714-718.
    by Jin Tan, Gordon Davies, Shusaku Hayama, Ruth Harding, Jennifer Wong-Leung
    posted to ion-implanted by rice on 2008-04-24 06:27:30 as **
  • Ion implantation dose high-resolution monitoring in Si wafers using laser infrared photothermal radiometry with lock-in common-mode-rejection demodulation
    Solid-State Electronics, Vol. 49, No. 5. (May 2005), pp. 769-773.
    by Andreas Mandelis, Felipe Rabago
    posted to ion-implanted by rice on 2008-04-24 06:27:27 as **
  • Heavy ion induced damage in crystalline silicon and diodes
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 156, No. 1-4. (2 July 1999), pp. 72-77.
    by P Sathyavathi, ST Chavan, D Kanjilal, VN Bhoraskar
    posted to ion-implanted by rice on 2008-04-24 06:27:25 as **
  • Mechanisms of amorphization in ion implanted crystalline silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 80-81, No. Part 1. (3 June 1993), pp. 514-518.
    by SU Campisano, S Coffa, V Raineri, F Priolo, E Rimini
    posted to ion-implanted by rice on 2008-04-24 06:27:23 as **
  • Optical doping of silicon with erbium by ion implantation
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 80-81, No. Part 1. (3 June 1993), pp. 653-658.
    by A Polman, JS Custer, E Snoeks, GN van den Hoven
    posted to ion-implanted by rice on 2008-04-24 06:27:20 as **
  • Ion-beam induced crystallization and amorphization at a crystalline/amorphous interface in <100> silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 19-20, No. Part 2. (1987), pp. 457-461.
    by A Leiberich, DM Maher, RV Knoell, WL Brown
    posted to ion-implanted by rice on 2008-04-24 06:27:18 as **
  • Ion-beam-induced crystallization and amorphization of silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 19-20, No. Part 2. (1987), pp. 435-442.
    by RG Elliman, JS Williams, WL Brown, A Leiberich, DM Maher, RV Knoell
    posted to ion-implanted by rice on 2008-04-24 06:27:15 as **
  • Ion beam induced defects in crystalline silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 216 (February 2004), pp. 46-56.
    by F Cristiano, N Cherkashin, X Hebras, P Calvo, Y Lamrani, E Scheid, B de Mauduit, B Colombeau, W Lerch, S Paul, A Claverie
    posted to ion-implanted by rice on 2008-04-24 06:27:13 as **
  • Investigation of minority carrier diffusion length in shallow junctions by angle-resolved illumination technique
    Materials Science and Engineering B, Vol. 102, No. 1-3. (15 September 2003), pp. 179-183.
    by A Parretta, P Grillo, M Tucci
    posted to ion-implanted by rice on 2008-04-24 06:27:11 as **
  • Investigation of defects in reactive ion-implanted silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 222, No. 1-2. (July 2004), pp. 75-80.
    by G Bhatt, AD Yadav, SK Dubey, Gundu
    posted to ion-implanted by rice on 2008-04-24 06:27:09 as **
  • Internal friction study of ion-implantation induced defects in silicon
    Materials Science and Engineering: A, Vol. 442, No. 1-2. (20 December 2006), pp. 63-66.
    by Xiao Liu, RO Pohl, DM Photiadis
    posted to ion-implanted by rice on 2008-04-24 06:27:05 as **
  • In-line implant and RTP process monitoring using the carrier illumination technique
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 237, No. 1-2. (August 2005), pp. 361-364.
    by WS Li, HK Lim, A Fan, CW Kuo, M Segovia, HA Kek
    posted to ion-implanted by rice on 2008-04-24 06:27:03 as **
  • Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic
    Applied Surface Science, Vol. 252, No. 19. (30 July 2006), pp. 7286-7289.
    by M Barozzi, D Giubertoni, S Pederzoli, M Anderle, E Iacob, M Bersani
    posted to ion-implanted by rice on 2008-04-24 06:27:01 as **
  • Implanted ZnO thin films: Microstructure, electrical and electronic properties
    Applied Surface Science, Vol. 253, No. 9. (28 February 2007), pp. 4317-4321.
    by J Lee, J Metson, PJ Evans, R Kinsey, D Bhattacharyya
    posted to ion-implanted by rice on 2008-04-24 06:26:58 as **
  • Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 748-751.
    by MDH Lay, JC Mccallum, C Jagadish
    posted to ion-implanted by rice on 2008-04-24 06:26:55 as **
  • Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator
    Materials Science and Engineering B, Vol. 114-115 (15 December 2004), pp. 251-254.
    by Peng Chen, Zhenghua An, Ming Zhu, Ricky K Fu, Paul K Chu, Neil Montgomery, Sukanta Biswas
    posted to ion-implanted by rice on 2008-04-24 06:26:53 as **
  • High-energy ion implantation of iron in silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 212 (December 2003), pp. 525-529.
    by KG Bhole, BA Kamalapurkar, SK Dubey, AD Yadav, Gundu, Tanuja Mohanti, D Kanjilal
    posted to ion-implanted by rice on 2008-04-24 06:19:41 as **
  • High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon
    Materials Science in Semiconductor Processing, Vol. 3, No. 4. (1 August 2000), pp. 237-241.
    by JH Evans-Freeman, AR Peaker, ID Hawkins, PYY Kan, J Terry, L Rubaldo, M Ahmed, S Watts, L Dobaczewski
    posted to ion-implanted by rice on 2008-04-24 06:19:38 as **
  • High resolution Laplace DLTS studies of defects in ion-implanted silicon
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 186, No. 1-4. (January 2002), pp. 41-45.
    by JH Evans-Freeman, N Abdelgader, PYY Kan, AR Peaker
    posted to ion-implanted by rice on 2008-04-24 06:19:37 as **
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