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yuhrennwu library [692 articles]

Статьи, недавно добавленные в библиотеку yuhrennwu .
  • Electronic structure calculations on nitride semiconductors
    Semiconductor Science and Technology, Vol. 14, No. 1. (1999), pp. 23-31.
    by SK Pugh, DJ Dugdale, S Brand, RA Abram
    posted to no-tag by yuhrennwu on 2006-08-03 18:29:47 as **
  • Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics
    Electronics Letters, Vol. 40, No. 7. (2004), pp. 419-421.
    by HT Philipp, KN Andersen, W Svendsen, H Ou
    posted to no-tag by yuhrennwu on 2006-05-28 00:40:23 as ** along with 3 people akriesch kristgy dmt195
  • GaN HFET technology for RF applications
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2000. 22nd Annual (2000), pp. 11-14.
    by C Nguyen, M Micovic, D Wong, A Kurdoghlian, P Hashimoto, P Janke, L Mccray, Jeong Moon
    posted to no-tag by yuhrennwu on 2006-05-17 05:40:04 as **
  • Thermal resistance calculation of AlGaN-GaN devices
    Microwave Theory and Techniques, IEEE Transactions on, Vol. 52, No. 11. (2004), pp. 2611-2620.
    by AM Darwish, AJ Bayba, HA Hung
    posted to no-tag by yuhrennwu on 2006-05-17 05:37:49 as ****
  • Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
    Electron Device Letters, IEEE, Vol. 23, No. 1. (2002), pp. 7-9.
    by M Kuball, JM Hayes, MJ Uren, I Martin, JCH Birbeck, RS Balmer, BT Hughes
    posted to no-tag by yuhrennwu on 2006-05-17 05:29:54 as **
  • Surface potential measurements on Ni--(Al)GaN lateral Schottky junction using scanning Kelvin probe microscopy
    Applied Physics Letters, Vol. 88, No. 2. (2006)
    by Chuanxin Lian, Huili ( Xing
    posted to aluminium band barriers boundaries carrier compounds gallium gap iii-v lifetime microscopy nickel photovoltage potential probe scanning schottky semiconductor-metal semiconductors surface wide bibtex-import by yuhrennwu on 2006-04-12 16:05:59 as **
  • Electron mobility in graded AlGaN alloys
    Applied Physics Letters, Vol. 88, No. 4. (2006)
    by Siddharth Rajan, Steven P Denbaars, Umesh K Mishra, Huili ( Xing, Debdeep Jena
    posted to aluminium band compounds conductivity electrical electron gallium gap iii-v mobility semiconductors wide bibtex-import by yuhrennwu on 2006-04-12 16:05:59 as **
  • Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN
    Applied Physics Letters, Vol. 88, No. 4. (2006)
    by John Simon, Albert ( Wang, Huili Xing, Siddharth Rajan, Debdeep Jena
    posted to aluminium band carrier compounds dielectric gallium gap iii-v impurities mobility phonons piezoelectric polarisation semiconductors wide bibtex-import by yuhrennwu on 2006-04-12 16:05:56 as **
  • Monte Carlo simulations of high-speed InSb-InAlSb FETs
    Electron Devices, IEEE Transactions on, Vol. 52, No. 6. (2005), pp. 1072-1078.
    by DC Herbert, PA Childs, RA Abram, GC Crow, M Walmsley
    posted to insb by yuhrennwu on 2006-04-08 02:31:13 as ****
  • Self-heating in high-power AlGaN-GaN HFETs
    Electron Device Letters, IEEE, Vol. 19, No. 3. (1998), pp. 89-91.
    by R Gaska, A Osinsky, JW Yang, MS Shur
    posted to no-tag by yuhrennwu on 2006-02-03 05:29:29 as *****
  • Electron drift velocity in AlGaN/GaN channel at high electric fields
    Applied Physics Letters, Vol. 83, No. 19. (2003), pp. 4038-4040.
    by L Ardaravicius, A Matulionis, J Liberis, O Kiprijanovic, M Ramonas, LF Eastman, JR Shealy, A Vertiatchikh
    posted to self-heating by yuhrennwu on 2006-02-03 05:19:35 as *****
  • Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes
    Applied Physics Letters, Vol. 83, No. 20. (2003), pp. 4083-4085.
    by A Yasan, R Mcclintock, K Mayes, DH Kim, P Kung, M Razeghi
    posted to self-heating by yuhrennwu on 2006-02-03 05:18:20 as **
  • Thermal analysis of AlGaN-GaN power HFETs
    Microwave Theory and Techniques, IEEE Transactions on, Vol. 51, No. 12. (2003), pp. 2445-2452.
    by S Nuttinck, BK Wagner, B Banerjee, S Venkataraman, E Gebara, J Laskar, HM Harris
    posted to no-tag by yuhrennwu on 2006-02-03 05:10:52 as *****
  • Self-heating and microwave noise in AlGaN/GaN
    physica status solidi (a), Vol. 201, No. 2. (January 2004), pp. 203-206.
    by L Ardaraviius, J Liberis, A Matulionis, LF Eastman, JR Shealy, A Vertiatchikh
    posted to no-tag by yuhrennwu on 2006-02-03 05:07:04 as ****
  • Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates
    Solid-State Electronics, Vol. 49, No. 10. (October 2005), pp. 1632-1638.
    by S Arulkumaran, T Egawa, H Ishikawa
    posted to no-tag by yuhrennwu on 2006-02-03 04:42:20 as **
  • Femtosecond optical studies of carrier localization and recombination in III-Nitride semiconductors
    Ultrafast Phenomena in Semiconductors VII, Vol. 4992, No. 1. (2003), pp. 217-225.
    by Michael Wraback, GA Garrett, AV Sampath, CJ Collins, Hongen Shen
    edited by Kong, Jin J Song, Hongxing Jiang
    posted to bibtex-import by yuhrennwu on 2006-02-03 04:32:35 as **
  • III-nitrate ultraviolet photonic materials: epitaxial growth, optical and electrical properties, and applications
    Quantum Sensing: Evolution and Revolution from Past to Future, Vol. 4999, No. 1. (2003), pp. 287-298.
    by Jingyu Lin, Hongxing Jiang
    edited by Manijeh Razeghi, Gail J Brown
    posted to bibtex-import by yuhrennwu on 2006-02-03 04:32:35 as **
  • GaN--AlGaN heterostructure field-effect transistors over bulk GaN substrates
    Applied Physics Letters, Vol. 76, No. 25. (2000), pp. 3807-3809.
    by Asif M Khan, JW Yang, W Knap, E Frayssinet, X Hu, G Simin, P Prystawko, M Leszczynski, I Grzegory, S Porowski, R Gaska, MS Shur, B Beaumont, M Teisseire, G Neu
    posted to aluminium band compounds effect electron field gallium gap gas hall iii-v mobility semiconductors transistors two-dimensional wide bibtex-import by yuhrennwu on 2006-02-03 04:27:06 as **
  • Thermal conductivity of GaN films: Effects of impurities and dislocations
    Journal of Applied Physics, Vol. 92, No. 5. (2002), pp. 2534-2539.
    by J Zou, D Kotchetkov, AA Balandin, DI Florescu, Fred H Pollak
    posted to band compounds conductivity defects dislocations films gallium gap iii-v impurities phonons point semiconductor semiconductors silicon thermal thin wide bibtex-import by yuhrennwu on 2006-02-03 04:27:06 as **
  • DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN Substrates
    Electrochemical and Solid-State Letters, Vol. 7, No. 1. (2004), pp. G8-G10.
    by Y Irokawa, B Luo, F Ren, CC Pan, GT Chen, JI Chyi, SS Park, YJ Park, SJ Pearton
    posted to aluminium compounds density device dislocation effect field gallium iii-v measurement mocvd semiconductor semiconductors substrates transistors bibtex-import by yuhrennwu on 2006-02-03 04:27:06 as **
  • High-power and reliable operation of vertical light-emitting diodes on bulk GaN
    Applied Physics Letters, Vol. 85, No. 18. (2004), pp. 3971-3973.
    by XA Cao, SD Arthur
    posted to band charge compounds current currents density devices diodes dislocations emitting gallium gap iii-v indium injection leakage light quantum semiconductor semiconductors well wells wide bibtex-import by yuhrennwu on 2006-02-03 04:27:05 as **
  • Temperature dependence of thermal conductivity of Al[sub x]Ga[sub 1 - x]N thin films measured by the differential 3 omega technique
    Applied Physics Letters, Vol. 85, No. 22. (2004), pp. 5230-5232.
    by Weili Liu, Alexander A Balandin
    posted to aluminium band compounds conductivity films gallium gap iii-v semiconductor semiconductors thermal thin wide bibtex-import by yuhrennwu on 2006-02-03 04:27:05 as **
  • Thermal conduction in Al[sub x]Ga[sub 1 - x]N alloys and thin films
    Journal of Applied Physics, Vol. 97, No. 7. (2005)
    by Weili Liu, Alexander A Balandin
    posted to aluminium band compounds conductivity films gallium gap iii-v interactions internal phonon-defect semiconductor semiconductors stresses thermal thin wide bibtex-import by yuhrennwu on 2006-02-03 04:27:05 as **
  • Self-heating study of an AlGaN/GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering
    Applied Physics Letters, Vol. 86, No. 17. (2005)
    by I Ahmad, V Kasisomayajula, M Holtz, JM Berg, SR Kurtz, CP Tigges, AA Allerman, AG Baca
    posted to aluminium band compounds effect electron energy field gallium gap gas heterojunctions iii-v raman semiconductor semiconductors spectra transistors two-dimensional ultraviolet visible wide bibtex-import by yuhrennwu on 2006-02-03 04:27:04 as **
  • Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2 x 8)/(2 x 4)
    The Journal of Chemical Physics, Vol. 119, No. 13. (2003), pp. 6719-6728.
    by MJ Hale, SI Yi, JZ Sexton, AC Kummel, M Passlack
    posted to arsenide chemisorption chemistry compounds density deposition fermi functional gallium level microscopy oxidation scanning spectroscopy structure surface theory tunnelling vacuum bibtex-import by yuhrennwu on 2006-02-02 21:45:40 as **
  • Studies of oxide desorption from GaAs substrates via Ga[sub 2]O[sub 3] to Ga[sub 2]O conversion by exposure to Ga flux
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3. (2004), pp. 1534-1538.
    by ZR Wasilewski, JM Baribeau, M Beaulieu, X Wu, GI Sproule
    posted to arsenide contamination desorption gallium iii-v mass roughness semiconductors spectroscopy stimulated substrates surface thermally treatment bibtex-import by yuhrennwu on 2006-02-02 21:44:48 as **
  • Ga[sub 2]O[sub 3] films for electronic and optoelectronic applications
    Journal of Applied Physics, Vol. 77, No. 2. (1995), pp. 686-693.
    by M Passlack, EF Schubert, WS Hobson, M Hong, N Moriya, SNG Chu, K Konstadinidis, JP Mannaerts, ML Schnoes, GJ Zydzik
    posted to annealing arsenides breakdown dielectric energy films function gallium gap index interfaces optical oxides photoluminescence properties reflection refractive thin bibtex-import by yuhrennwu on 2006-02-02 21:44:13 as **
  • In situ fabricated Ga[sub 2]O[sub 3]--GaAs structures with low interface recombination velocity
    Applied Physics Letters, Vol. 66, No. 5. (1995), pp. 625-627.
    by M Passlack, M Hong, EF Schubert, JR Kwo, JP Mannaerts, SNG Chu, N Moriya, FA Thiel
    posted to arsenides beam epitaxy fabrication gallium molecular oxides passivation photoluminescence recombination states surface bibtex-import by yuhrennwu on 2006-02-02 21:44:13 as **
  • Deposition of Ga[sub 2]O[sub 3 - x] ultrathin films on GaAs by e-beam evaporation
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, No. 3. (2002), pp. 809-813.
    by NC Oldham, CJ Hill, CM Garland, TC Mcgill
    posted to arsenide beam boundaries compounds crystal deposition electron films gallium iii-v insulating interface microscopy morphology photoelectron roughness semiconductor-insulator semiconductors spectra stoichiometry thin transmission x-ray bibtex-import by yuhrennwu on 2006-02-02 21:44:12 as **
  • Comparison of density functional theory methods as applied to compound semiconductor-oxide interfaces: Slab versus cluster models
    Papers from the 30th Conference on the Physics and Chemistry of Semiconductor Interfaces, Vol. 21, No. 4. (2003), pp. 1908-1914.
    by JZ Sexton, AC Kummel
    posted to approximation arsenide boundaries calculations cluster density electronic fermi functional gallium iii-v interface lcao level of oxidation passivation semiconductor-insulator semiconductors states structure theory bibtex-import by yuhrennwu on 2006-02-02 21:44:12 as **
  • Structural and Optical Characteristics of Gallium Oxide Thin Films Deposited by Ultrasonic Spray Pyrolysis
    Journal of The Electrochemical Society, Vol. 148, No. 2. (2001), pp. F26-F29.
    by A Ortiz, JC Alonso, E Andrade, C Urbiola
    posted to bibtex-import by yuhrennwu on 2006-02-02 21:30:29 as **
  • Carrier mobility model for GaN
    Solid-State Electronics, Vol. 47, No. 1. (January 2003), pp. 111-115.
    by Tigran T Mnatsakanov, Michael E Levinshtein, Lubov I Pomortseva, Sergey N Yurkov, Grigory S Simin, Asif
    posted to heat mobility model by yuhrennwu on 2006-02-02 01:41:17 as **
  • Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures
    Applied Physics Letters, Vol. 88, No. 4. (2006)
    by Igor Stolichnov, Lisa Malin, Paul Muralt, Nava Setter
    posted to aluminium atomic compounds dielectric domains effect electric electron ferroelectric films force gallium gas hall heterojunctions iii-v lead microscopy mobility polarisation semiconductor semiconductors thin two-dimensional bibtex-import by yuhrennwu on 2006-01-30 22:21:14 as **
  • Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics
    Applied Physics Letters, Vol. 88, No. 4. (2006)
    by Takuma Nanjo, Toshiyuki Oishi, Muneyoshi Suita, Yuji Abe, Yasunori Tokuda
    posted to aluminium association band barriers compounds currents diodes electron films gallium gap high hole iii-v leakage metallic mobility schottky semiconductors thin transistors traps wide bibtex-import by yuhrennwu on 2006-01-30 22:21:13 as **
  • Band parameters and electronic structures of wurtzite ZnO and ZnO/MgZnO quantum wells
    Journal of Applied Physics, Vol. 99, No. 1. (2006)
    by WJ Fan, JB Xia, PA Agus, ST Tan, SF Yu, XW Sun
    posted to band calculations compounds ii-vi kp magnesium methods pseudopotential quantum semiconductor semiconductors strength structure tensile wells zinc bibtex-import by yuhrennwu on 2006-01-30 22:10:34 as **
  • Punch-Through in Short-Channel AlGaN/GaN HFETs
    Electron Devices, IEEE Transactions on, Vol. 53, No. 2. (2006), pp. 395-398.
    by MJ Uren, KJ Nash, RS Balmer, T Martin, E Morvan, N Caillas, SL Delage, D Ducatteau, B Grimbert, JC Dejaeger
    posted to channel gan short by yuhrennwu on 2006-01-30 22:04:34 as ***
  • Recessed-Gate Structure Approach Toward Normally Off High-Voltage AlGaN/GaN HEMT for Power Electronics Applications
    Electron Devices, IEEE Transactions on, Vol. 53, No. 2. (2006), pp. 356-362.
    by W Saito, Y Takada, M Kuraguchi, K Tsuda, I Omura
    posted to no-tag by yuhrennwu on 2006-01-30 22:01:22 as **
  • Experimental Validation of GaN HEMTs Thermal Management by Using Photocurrent Measurements
    Electron Devices, IEEE Transactions on, Vol. 53, No. 2. (2006), pp. 182-188.
    by P Regoliosi, A Reale, A Dicarlo, P Romanini, M Peroni, C Lanzieri, A Angelini, M Pirola, G Ghione
    posted to no-tag by yuhrennwu on 2006-01-30 21:59:44 as ***
  • On the Resolution of the Mechanism for Reverse Gate Leakage in AlGaN/GaN HEMTs
    Electron Device Letters, IEEE, Vol. 27, No. 2. (2006), pp. 87-89.
    by S Karmalkar, N Satyan, DM Sathaiya
    posted to no-tag by yuhrennwu on 2006-01-30 21:56:45 as **
  • Codoping of wide gap epitaxial III-Nitride semiconductors
    Opto-Elec. Rev., Vol. 10, No. 4. (2002), pp. 243-249.
    by RY Korotkov, JM Gregie, BW Wessels
    posted to bibtex-import by yuhrennwu on 2006-01-30 21:47:02 as **
  • Influence of the access resistance in the RF performance of mm-wave AlGaN/GaN HEMTs
    (June 2004), pp. 75-76.
    by Tomas Palacios, S Rajan, Shen, S Heikman, S Keller, SP Denbaars, UK Mishra
    posted to bibtex-import by yuhrennwu on 2006-01-30 21:31:22 as **
  • Use of multichannel heterostrucures to improve the access resistance and f$_T$ linearilty in GaN-based HEMTs
    (2004), pp. 41-42.
    by Tomas Palacios, A Chini, D Buttari, S Heikman, S Keller, SP Denbaars, UK Mishra
    posted to bibtex-import by yuhrennwu on 2006-01-30 21:31:22 as ** along with 1 person chinyao
  • Polarization effects in nitride and ferroelectric based devices
    (November 2004)
    by Madhusudan Singh
    posted to bibtex-import by yuhrennwu on 2006-01-30 21:31:22 as **
  • Monte Carlo study of noise scaling in AlGaN/GaN HFETs
    (2004)
    by Madhusudan Singh, Yuh R Wu, Tomas Palacios, Jasprit Singh, Umesh Mishra
    posted to bibtex-import by yuhrennwu on 2006-01-30 21:31:22 as **
  • Velocity overshoot effects and transit times in III-V nitride HFETs : A Monte Carlo study
    (2004)
    by Yuh, Jasprit Singh
    posted to bibtex-import by yuhrennwu on 2006-01-30 21:31:22 as **
  • Ballistic tunneling transit-time device for terahertz power generation
    (2001), pp. 62-72.
    by J East, GI Haddad
    posted to bibtex-import by yuhrennwu on 2006-01-30 21:31:22 as **
  • Two-terminal active devices for terahertz sources
    (2003), pp. 45-77.
    by GI Haddad, J East, H Eisele
    edited by D Woolard, MS Shur, W Leorop
    posted to bibtex-import by yuhrennwu on 2006-01-30 21:31:22 as **
  • Active Two-Terminal Devices for Terahertz Power Generation by Multiplication
    Vol. 27 (2001), pp. 69-86.
    by H Eisele
    edited by RE Miles, P Harrison, D Lippens
    posted to bibtex-import by yuhrennwu on 2006-01-30 21:31:22 as **
  • GaAs fundamental-mode CW TUNNETT oscillators for THz-band applications
    (Sept. FebruaryApril-FebruaryJune 2003)
    by P Plotka, Nishizawa, T Kurabayashi, H Makabe
    posted to bibtex-import by yuhrennwu on 2006-01-30 21:31:22 as **
  • Submillimeter-wave oscillation from GaAs TUNNETT diode
    (Sept. JanuaryJuly-February0 1979), pp. 464-467.
    by J Nishizawa, K Motoya, Y Okuno
    posted to bibtex-import by yuhrennwu on 2006-01-30 21:31:22 as **
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